Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1107
DESCRIPTION
·With MT-200 package
·High power dissipations
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
P
T
C
C
j
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Collector power dissipation
Junction temperature 150
℃)
T
=25℃
C
120 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1107
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
(BR)CEO
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -150 V
Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V
Collector cut-off current VCB=-140V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-5V 55 160
DC current gain IC=-5A ; VCE=-5V 35
Transition frequency IC=-0.5A ; VCE=-10V 50 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1107
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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