Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1065
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
·Complement to type 2SC2489
APPLICATIONS
·For audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Collector current-peak -15 A
Collector power dissipation
℃)
T
=25℃
C
120 W
T
j
T
stg
Junction temperature 150
Storage temperature -65~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1065
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
f
BE
T
Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -150 V
Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.0 V
Base-emitter on voltage IC=-10A;VCE=-5V -2.5 V
Collector cut-off current VCB=-70V; IE=0 -1 mA
Emitter cut-off current VEB=-5V; IC=0 -2 mA
DC current gain IC=-2A ; VCE=-5V 40 280
DC current gain IC=-10A ; VCE=-5V 20
Transition frequency IC=-0.5A ; VCE=-5V 50 MHz
h
Classifications
FE-1
R Q P O
40-80 60-120 90-180 140-280
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1065
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...