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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1061
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Power Dissipation
·Complement to Type 2SC2485
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T
= -100V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -6 A
ICM Collector Current-Peak -10 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -55~150 ℃
70 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1061
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -100 V
Collector-Emitter Saturation Voltage I
Base-Emitter On Voltage I
= -4A; IB= -0.4A -2.0 V
C
= -4A; VCE= -5V -1.8 V
C
Collector Cutoff Current VCB= -100V; IE= 0 -50
Emitter Cutoff Current VEB= -3V; IC= 0 -50
DC Current Gain IC= -0.2A; VCE= -5V 20
DC Current Gain IC= -1A; VCE= -5V 40 220
DC Current Gain IC= -4A; VCE= -5V 20
fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz
h
Classifications
FE-2
μA
μA
R Q P
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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