Datasheet 2SA1579, 2SA1514K, 2SA1038S Datasheet (ROHM)

Page 1
查询2SA1038S供应商
2SA1579 / 2SA1514K / 2SA1038S
Transistors
High-voltage Amplifier Transistor (−120V, −50mA)
2SA1579 / 2SA1514K / 2SA1038S
zFeatures
CEO = −120V)
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.
zExternal dimensions (Unit : mm)
2SA1579
ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323
2SA1514K
0.4
ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346
2SA1038S
ROHM : SPT EIAJ : SC-72
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
0.15
0.3Min.
3
)
15Min.
(
(1) (2) (3)
Each lead has same dimensions
0~0.1
) 1
(
) 2
)
(
3
(
1.6
2.8
0 to 0.1
42
3Min.
0.45
2.5
5
)
1
(
0.65
)
2
2.0
1.3
(
0.65
0.2
0.9
0.7
(1) Emitter (2) Base (3) Collector
1.9
2.9
0.95 0.95
1.1
0.8
Each lead has same dimensions
(1) Emitter (2) Base (3) Collector
0.45
0.5
Taping specifications
(1) Emitter (2) Collector (3) Base
Rev.A 1/3
Page 2
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
Junction temperature Storage temperature
zPackaging specifications and h
Package h
FE
Marking Code Basic ordering unit (pieces)
Denotes h
∗
FE
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
2SA1579 / 2SA1514K 2SA1038S
FE
Type 2SA1038S
2SA1579
UMT3
RS
R T106 3000
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
V V V
Tstg
BV BV BV
I I
V
CE(sat)
Cob
CBO CEO EBO
I
P
Tj
CBO EBO
h
f
C
C
CBO CEO EBO
FE T
−55 to +150
2SA1514K
SMT3
RS
R T146 3000
−120
−120
−5
−
−
−
180
−
−
2SA1579 / 2SA1514K / 2SA1038S
Limits
−120
−120
−5
−50
0.2
0.3
150
∗
−
−
−
−
−
−
−
140
3.2
−
−
−
−0.5
−0.5
−0.5
560
−
−
Unit
V V V
mA
W
°C °C
SPT
RS
−
TP
5000
V V V
µA µA
V
−
MHz
pF
I
C
= −50µA
I
C
= −1mA
E
= −50µA
I
CB
= −100V
V V
EB
= −4V
C/IB
= −10mA/−1mA
I V
CE
= −6V, IC= −2mA
CE
= −12V, IE=2mA, f=100MHz
V
CB
= −12V, IE=0A, f=1MHz
V
Rev.A 2/3
Page 3
Transistors
zElectrical characteristic curves
−10
Ta=25°C
(mA)
−8
C
−6
−4
−2
COLLECTOR CURRENT : I
0 −20−16−12−8−4
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Ground emitter output characteristics
Ta=25°C
(V)
CE(sat)
−0.5
25.0
−
22.5
−
−20.0
17.5
−
−15.0
12.5
−
−10.0
7.5
−
−5.0
−2.5µA
IB=0
(V)
CE
2SA1579 / 2SA1514K / 2SA1038S
−50
−20
(mA)
C
−10
−5
−2
−1
−0.5
−0.2
COLLECTOR CURRENT : I
−0.1 0 −1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.2
BASE TO EMITTER VOLTAGE : V
Fig.2 Ground emitter propagation characteristics
Ta=25°C VCE= −6V
)
Z
(MH
500
T
Ta=25°C VCE= −6V
(V)
BE
Ta=25°C
500
FE
VCE= −1V
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : I
Fig.3 DC current gain vs. collector current
20
Ta=25°C
(pF)
f=1MH
Z
IE=0A
10
C
(mA)
−
5V
−3V
−0.2
IC/IB=50/1
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR SATURATION VOLTAGE : V
20/1
10/1
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-Emitter saturation voltage vs. collector current
20
Cib
10
5
2
EMITTER INPUT CAPACITANCE : Cib (pF)
1
−0.5 −1 −2 −5 −10 −20
EMITTER TO BASE VOLTAGE : V
Fig.7 Emitter input capacitance vs. emitter-base voltage
Ta=25 f=1MH IC=0A
EB
(V)
°C
Z
200
100
50
TRANSITION FREQUENCY : f
0.5 1 2 5 10 20 50
EMITTER CURRENT : I
E
(mA)
Fig.5 Transition frequency vs. emitter current
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
−0.5 −1 −2 −5 −10 −20
Cob
COLLECTOR TO BASE VOLTAGE : V
Fig.6 Collector output capacitance vs. collector-base voltage
CB
(V)
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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