Datasheet 2SA1035, 2SA1034 Datasheet (Panasonic)

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SA1034, 2SA1035

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406

Features

■

●

Low noise voltage NV.

●

High foward current transfer ratio hFE.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency

Noise voltage

*

h

Rank classification

FE1

Marking
Symbol

Rank R S T

Symbol

2SA1034
2SA1035
2SA1034
2SA1035

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Parameter

2SA1034
2SA1035
2SA1034
2SA1035

h

FE

2SA1034 FR FS FT

180 ~ 360 260 ~ 520 360 ~ 700

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*1

h

FE

V

CE(sat)

V

BE

f

T

NV

Ratings

–35
–55
–35
–55

–5

–100

–50
200
150

–55 ~ +150

VCB = –10V, IE = 0
VCE = –10V, IB = 0

IC = –10µA, IE = 0

IC = –2mA, IB = 0

IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

2SA1035 HR HS HT

Unit

V

V

V
mA
mA

mW

˚C
˚C

Conditions

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : F

min

–35
–55
–35
–55

–5

180

*2

*2

(2SA1034)

(2SA1035)

H

typ

– 0.7

200

*2

Pulse measurement

max

–100

–1

700
– 0.6
–1.0

150

Unit: mm

Unit

nA
µA

V

V

V

V
V

MHz

mV

1

Transistor

2SA1034, 2SA1035

PC—Ta IC—V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB—V

BE

–800

–700

–600

)
µA

(

–500

B

–400

VCE=–5V
Ta=25˚C

CE

–160

–140

)

–120

mA

(

C

–100

–80

–60

–40

Collector current I

–20

0

0 –12–10–8–2 –6–4

)

Collector to emitter voltage VCE (V

IC—V

–120

)
mA

(

–100

–80

C

–60

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

IB=–350µA

–300µA

–250µA
–200µA

–150µA

–100µA

–50µA

BE

VCE=–5V

–160

–140

)

–120

mA

(

C

–100

–80

–60

–40

Collector current I

–20

)

)

–100

V

(

–30

CE(sat)

–10

0

0– 0.5– 0.4– 0.1 – 0.3– 0.2

–3

–1

IC—I

B

VCE=–5V
Ta=25˚C

Base current IB (mA

V

CE(sat)—IC

)

IC/IB=10

–300

Base current I

–200

–100

0

0 –1.0– 0.8– 0.2 – 0.6– 0.4

Base to emitter voltage VBE (V

hFE—I

C

600

FE

500

Ta=75˚C

400

300

200

100

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

–25˚C

VCE=–5V

Collector current IC (mA

–40

Collector current I

–20

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

)

Base to emitter voltage VBE (V

fT—I

E

500

450

)

400

MHz

(

350

T

300

250

200

150

100

Transition frequency f

50

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

VCB=–5V
Ta=25˚C

)

)

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

–0.1 –1 –10 –100–0.3 –3 –30

Collector current IC (mA

Cob—V

20

)

18

pF

(

16

ob

14

12

10

8

6

4

2

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

Ta=75˚C

CB

–25˚C

IE=0
f=1MHz
Ta=25˚C

)

Collector to base voltage VCB (V

)

2

Transistor

2SA1034, 2SA1035

NV — V

160

140

)

120

mV

(

100

80

60

40

Noise voltage NV

20

Rg=100kΩ

0

–1 –3 –10 –30 –100

22kΩ

4.7kΩ

CE

IC=–1mA

=80dB

G

V

Function=FLAT

Collector to emitter voltage VCE (V

NV — I

C

300

240

)
mV

(

180

120

Noise voltage NV

60

0

– 0.01 – 0.03 – 0.1 – 0.3 –1

VCE=–10V

=80dB

G

V

Function=RIAA

Rg=100kΩ

Collector current IC (mA

22kΩ

4.7kΩ

NV — V

300

240

)
mV

(

Noise voltage NV

)

Rg=100kΩ

180

120

60

0

–1 –3 –10 –30 –100

Collector to emitter voltage VCE (V

NV — R

160

140

)

120

mV

(

100

80

60

40

Noise voltage NV

)

– 0.5mA

20

0

1 3 10 30 100

Signal source resistance Rg (kΩ

22kΩ

4.7kΩ

IC=–1mA

CE

IC=–1mA

=80dB

G

V

Function=RIAA

g

VCE=–10V

=80dB

G

V

Function=FLAT

– 0.1mA

)
mV

(

Noise voltage NV

)

)
mV

(

Noise voltage NV

)

160

140

120

100

80

60

40

20

0

– 0.01 – 0.03 – 0.1 – 0.3 –1

300

240

180

120

60

0

1 3 10 30 100

Signal source resistance Rg (kΩ

NV — I

C

VCE=–10V

=80dB

G

V

Function=FLAT

Rg=100kΩ

22kΩ

4.7kΩ

Collector current IC (mA

– 0.5mA

NV — R

– 0.1mA

IC=–1mA

g

=–10V

V

CE

=80dB

G

V

Function=RIAA

)

)

3