Page 1
2SA1020
One Watt High Current
PNP Transistor
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
P
P
TJ, T
CE
CB
EB
C
D
D
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
stg
50 Vdc
50 Vdc
5.0 Vdc
2.0 Adc
900
5.0mWmW/°C
1.5
12WmW/°C
−55 to
+150
125 °C/W
83.3 °C/W
°C
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VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
BASE
1
2
3
STRAIGHT LEAD
BULK PACK
3
EMITTER
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
PNP
1
TO−92 (TO−226)
3
CASE 29−10
STYLE 14
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
1 Publication Order Number:
MARKING DIAGRAM
2SA
1020
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2SA1020/D
Page 2
2SA1020
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
= 10 mAdc, IB = 0)
(I
C
Collector Cutoff Current
(V
= 50 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 5.0 V, IC = 0)
EB
ON CHARACTERISTICS (Note 2)
DC Current Gain
= 500 mA, VCE = 2.0 V)
(I
C
(IC = 1.5 A, VCE = 2.0 V)
Collector−Emitter Saturation Voltage
(I
= 1.0 A, IB = 50 mA)
C
Base−Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA) V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
is defined as the frequency at which |hfe| extrapolates to unity.
3. f
T
Symbol Min Max Unit
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
BE(sat)
f
50 −
− 1.0
− 1.0
70
40
240
−
− 0.5
− 1.2 Vdc
T
100 − MHz
Vdc
mAdc
mAdc
Vdc
−
ORDERING INFORMATION
Device Package Shipping
2SA1020RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
Page 3
2SA1020
250
TJ = 125°C
225
200
175
150
25°C
125
100
75
, DC CURRENT GAIN
FE
h
50
−55°C
25
0
−10 −20 −50 −100 −200−500
IC, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
IC = −10 mA IC = −100 mA
0
−0.05
−0.1−0.2 −0.5−1.0−2.0 −5.0−10−20 −50−100−200 −500
Figure 3. Collector Saturation Region
VCE = −2.0 V
−1.0 A −2.0 A −4.0 A
TJ = 25°C
IC = −500 mA IC = −2.0 A
−2.0
−1.8
−1.6
−1.4
−1.2
V
@ IC/IB = 10
−1.0
BE(sat)
−0.8
V
@ VCE = 2.0 V
V, VOLTAGE (VOLTS)
−0.6
BE(on)
−0.4
V
@ IC/IB = 10
−0.2
0
−50
−100 −200 −500 −1.0 A −2.0 A −4.0 A
CE(sat)
IC, COLLECTOR CURRENT (mA)
Figure 2. On Voltages
−10
−4.0
−2.0
−1.0
1.0 ms
−0.5
−0.2
−0.1
−0.05
, COLLECTOR CURRENT (A)
C
I
−0.02
−0.01
TA = 25°C
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
T
= 25°C
C
−1.0 −2.0 −5.0 −10 −20 −50 −100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)IB, BASE CURRENT (mA)
V
CE
Figure 4. Safe Operating Area
100 ms
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3
Page 4
2SA1020
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
STRAIGHT LEAD
B
BULK PACK
R
P
F
XX
H
V
1
L
K
D
G
J
C
SECTION X−X
N
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---
MILLIMETERSINCHES
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
A
R
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
XX
G
K
D
J
V
1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J 0.018 0.024 0.46 0.61
K 0.500 --- 12.70 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---
MILLIMETERSINCHES
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Email: [email protected]
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2SA1020/D
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