Page 1
Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473
Features
■
●
High collector to emitter voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
V
V
I
I
P
T
T
CP
C
CBO
CEO
EBO
C
j
stg
Symbol
I
CEO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
CEO
.
Ratings
–250
–200
–5
–100
–70
750
150
–55 ~ +150
VCE = –120V, IB = 0, Ta = 60˚C
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f= 1MHz
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ max
–200
–5
60
50
0.45
2.3±0.2
+0.2
–0.1
Unit: mm
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
–1
220
–1.5
10
Unit
µA
V
V
V
MHz
pF
*
hFE Rank classification
Rank Q R
h
FE
60 ~ 150 100 ~ 220
1
Page 2
Transistor
2SA1018
PC—Ta IC—V
1000
)
900
mW
(
800
C
700
600
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Collector current IC (mA
)
IC/IB=10
Ta=75˚C
–25˚C
)
CE
–100
–90
–80
)
mA
(
–70
C
–60
–50
–40
–30
Collector current I
–20
–10
0
0 –12–10–8–2 –6–4
IB=–1.0mA
Collector to emitter voltage VCE (V
hFE—I
C
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
25˚C
–25˚C
VCE=–10V
Collector current IC (mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
)
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
120
)
100
MHz
(
T
80
60
40
20
Transition frequency f
0
0.1 1 10 1000.3 3 30
IC—V
BE
VCE=–10V
25˚C
Ta=75˚C
–25˚C
fT—I
E
VCB=–10V
Ta=25˚C
Emitter current IE (mA
)
)
Cob—V
20
)
18
pF
(
16
ob
14
12
10
8
6
4
2
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
I
—Ta
CEO
10000
3000
1000
VCE=–120V
)
300
)
Ta
(
100
Ta=25˚C
(
CEO
I
30
CEO
I
10
3
1
0 24020016040 12080
)
Ambient temperature Ta (˚C
)
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