Page 1
2SA1015K
Elektronische Bauelemente
ƔFEATURES
. Power Dissipation
P
CM: 0.2 W ( Ta = 25 к )
. Collector Current
I
CM: -0.15 A
. Collector-Base Voltage
V
(BR)CBO: -50 V
1
2
1.BASE
2.EMITTER
3.COLLECTOR
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
D
3
Top View
1
2
GV
S
B
C
H
K
PNP Type
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE V
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Transition Frequency f
Operating and Storage Junction
Temperature Range
Ɣh
FE
Marking: BA
TYPE NUMBER SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT
IC = -100 µA, IE = 0 A -50 - - V
(BR)CBO
IC = -0.1 mA, IB = 0 A -50 - - V
(BR)CEO
IE = -10 µA, IC = 0 A -5 - - V
(BR)EBO
VCB = -50 V, IE = 0 A - - -0.1 µA
CBO
VCE = -50 V, IB = 0 A - - -0.1 µA
CEO
VEB = -5 V, IC = 0 A - - -0.1 µA
EBO
CE (sat) IC
BE(sat) IC
T
T
, T
- - 55 ~ +150
J
STG
= -6 V, I
CE
= -100 mA, IB = -10 mA - - -0.3 V
= -100 mA, IB = -10 mA - - -1.1 V
VCE = 10 V, IC = 1 mA,
f = 30 MHz
= -2 mA 130 - 400
C
80 - - MHz
VALUES ARE CLASSIFIED AS FOLLOWS:
Rank L H
h
FE
130 ~ 200 200 ~ 400
к
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
Page 2
2SC1015K
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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