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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1013
2SA1013
Color TV Verttical Deflection Output Applications
Power Switching Applications
• High voltage: V
• Large continuous collector current capability
• Recommended for vertical deflection output & sound output
applications for line-operated TV.
• Complementary to 2SC2383.
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −1 A
Base current IB −0.5 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range T
Electrical Characteristics
CEO
= −160 V
(Ta = 25°C)
(Ta = 25°C)
CBO
CEO
−6 V
EBO
stg
160 V
−
160 V
−
55 to 150 °C
−
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain h
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = −5 V, IC = −5 mA −0.45 ⎯ −0.75 V
Transition frequency fT VCE = −5 V, IC = −200 mA 15 50 ⎯ MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ ⎯ 35 pF
Note: h
classification R: 60 to 120, O: 100 to 200
FE
VCB = −150 V, IE = 0 ⎯ ⎯ −1.0 µA
CBO
VEB = −6 V, IC = 0 ⎯ ⎯ −1.0 µA
EBO
(BR) CEOIC
(Note) VCE = −5 V, IC = −200 mA 60
FE
CE (sat)
= −10 mA, IB = 0
IC = −500 mA, IB = −50 mA
−
160
⎯
⎯
200
⎯
⎯ −
⎯
1.5 V
V
Marking
A1013
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SA1013
−12
I
C
– VCE
10
−
8
−
−6
−4.5
3
−
−2
IB = −1 mA
0
Common emitter
Ta = 25°C
−28
300
100
FE
50
DC current gain h
30
10
Common emitter
Ta = 25°C
5
−10
−30 −100 −300 −1000
Collector current IC (A)
−1.0
15
−
−0.8
(A)
C
−0.6
−0.4
Collector current I
0.2
−
0
0
−4 −8 −12 −16 −20 −24
Collector-emitter voltage VCE (V)
300
FE
100
Ta = 100°C
25
0
50
30
h
– IC
FE
DC current gain h
10
Common emitter
5
−10
VCE = −10 V
VCE = −5 V
−30 −100 −300 − 1000
Collector current IC (mA)
Collector-emitter saturation voltag e
VCE (sat) (V)
−0.05
−0.03
−3
Common emitter
Ta = 25°C
−1
−0.5
−0.3
−0.1
IC/IB = 10
5
−5
−10 −30 −100 −300 −1000
Collector current IC (A)
−3
Common emitter
IC/IB = 10
−1
−0.5
(V)
−0.3
CE (sat)
V
Collector-emitter saturation voltage
−0.05
−0.03
Ta = 100°C
−0.1
25
−5
0
−10 −30 −100 −300 −1000
Collector current IC (A)
V
CE (sat)
– IC
−1.0
−0.8
−0.6
(A)
C
−0.4
−0.2
Collector current I
−0
0
Ta = 100°C
−0.2 −0.4 −0.6 −0.8 −1.0 −1.4
Base-emitter voltage VBE (V)
h
V
CE (sat)
I
C
– IC
FE
– VBE
25
– I
0
VCE = −2 V
C
5
−
Common emitter
VCE = −5 V
−1.2
−10
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2SA1013
300
f
T
– IC
100
(MHz)
t
50
30
VCE = −5 V
2
−
Transition frequency f
10
5
3
-1
Common emitter
Ta = 25°C
−3 −10 −30 −100 −300
Collector current IC (A)
−3
Safe Operating Area
IC max (pulsed)*
−1
−0.5
−0.3
(A)
C
−0.1
IC max = −1.0 A
DC operation
−0.05
Ta = 25°C
−0.03
Collector current I
*: Single nonrepetitive pulse
Ta = 25°C
−0.01
Curves must be derated linearly
with increase in temperature.
−0.003
−1
100 ms*
Collector-emitter voltage VCE (V)
Thermal limited
1 ms*
S/B limited
V
CEO
10 ms*
max
−100 −30 −3 −10
−300
C
– VCB
300
(pF)
ob
100
50
30
10
5
Collector output capacitance C
3
-1
−3 −10 −30 −100 −300
Collector-base voltage VCE (V)
ob
Common emitter
f = 1 MHz
Ta = 25°C
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2SA1013
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
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