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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1006A
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SC2336A
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
= -200V(Min)
℃)
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -1.5 A
ICM Collector Current-Peak -3.0 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base Voltage -200 V
Collector-Emitter Voltage -200 V
Emitter-Base Voltage -5.0 V
Collector Power Dissipation@ Ta=25℃ 1.5
W
Total Power Dissipation@ T
Storage Temperature Range -55~150 ℃
=25℃ 25
C
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1006A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V
CE(sat)
V
Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V
BE(sat)
I
Collector Cutoff Current VCB= -150V; IE= 0 -1.0 μA
CBO
I
Emitter Cutoff Current VEB= -3.0V; IC=0 -1.0 μA
EBO
h
DC Current Gain IC= -5mA ; VCE= -5V 30
FE-1
h
DC Current Gain IC= -150mA ; VCE= -5V 60 320
FE-2
fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 80 MHz
COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 45 pF
h
Classifications
FE-2
R Q P
60-120 100-200 160-320
isc Website：www.iscsemi.cn
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