Page 1
Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SA879
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1573
Features
■
●
High collector to emitter voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
V
V
I
I
P
T
T
CP
C
CBO
CEO
EBO
C
j
stg
Symbol
I
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
CEO
.
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
VCB = –12V, IB = 0
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
mA
mA
W
˚C
˚C
Conditions
min
–200
–5
60
50
typ
80
5
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
max
Unit
–2
µA
V
V
220
–1.5
V
MHz
10
pF
*
hFE Rank classification
Rank Q R
h
FE
60 ~ 150 100 ~ 220
1
Page 2
Transistor 2SA879
PC—Ta IC—V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB—V
BE
–2.4
–2.0
)
mA
–1.6
(
B
–1.2
VCE=–10V
Ta=25˚C
CE
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IC—V
–120
)
(
–100
mA
C
–80
–60
25˚C
Ta=75˚C
IB=–2mA
–25˚C
BE
Ta=25˚C
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
VCE=–10V
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
)
)
–100
V
(
–30
CE(sat)
–10
0
0 –2.4–2.0–1.6– 0.4 –1.2– 0.8
–3
–1
IC—I
B
VCE=–10V
Ta=25˚C
Base current IB (mA
V
CE(sat)—IC
)
IC/IB=10
– 0.8
Base current I
– 0.4
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
Base to emitter voltage VBE (V
hFE—I
C
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
25˚C
–25˚C
VCE=–10V
Collector current IC (mA
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
)
Base to emitter voltage VBE (V
fT—I
E
160
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
VCB=–10V
f=100MHz
Ta=25˚C
)
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
16
)
pF
14
(
ob
12
10
8
6
4
2
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
25˚C
–25˚C
Cob—V
Ta=75˚C
CB
)
f=1MHz
=0
I
E
Ta=25˚C
)
2
Page 3
Transistor 2SA879
I
10000
3000
1000
)
300
)
Ta
(
100
Ta=25˚C
(
EBO
I
30
EBO
I
10
3
1
0 20016040 12080
Ambient temperature Ta (˚C
—Ta I
EBO
VEB=–5V
10000
3000
1000
)
300
)
Ta
(
100
Ta=25˚C
(
CBO
I
30
CBO
I
10
3
1
0 20016040 12080
)
Ambient temperature Ta (˚C
— Ta Area of safe operation (ASO)
CBO
VCB=–250V
–1000
–300
)
–100
mA
(
C
Collector current I
– 0.3
– 0.1
)
I
CP
I
C
–30
–10
–3
–1
–1 –10 –100 –1000–3 –30 –300
t=1s
Collector to emitter voltage VCE (V
Single pulse
Ta=25˚C
t=10ms
)
3
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