Page 1
Transistor
2SA720A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
Features
■
●
High collector to emitter voltage V
●
Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
.
CEO
Ratings
– 0.5
–55 ~ +150
–80
–70
–5
–1
625
150
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 100MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
A
A
mW
˚C
˚C
Conditions
Unit: mm
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
–80
–70
–5
*2
*2
*2
*2
85
40
– 0.2
– 0.85
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
typ
max
– 0.1
240
– 0.6
–1.5
120
20
30
*2
Pulse measurement
Unit
µA
V
V
V
V
V
MHz
pF
*1
h
Rank classification
FE1
Rank Q R
h
FE1
85 ~ 170 120 ~ 240
1
Page 2
Transistor
2SA720A
PC—Ta IC—V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
–1 –10 –100 –1000–3 –30 –300
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
CE
–1.2
–1.0
)
A
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0 –10–8–2 –6–4
IB=–10mA
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
–1 –10 –100 –1000–3 –30 –300
Ta=–25˚C
IC/IB=10
25˚C
75˚C
Collector current IC (A
IC—I
B
)
A
(
–1.2
–1.0
– 0.8
C
– 0.6
– 0.4
VCE=–10V
Ta=25˚C
Collector current I
– 0.2
0
0 –10–8–2 –6–4
)
Base current IB (mA
hFE—I
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1 –10 –100 –1000–3 –30 –300
)
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
C
VCE=–10V
)
fT—I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
Emitter current IE (mA
2
E
VCB=–10V
Ta=25˚C
)
Cob—V
50
)
45
pF
(
40
ob
35
30
25
20
15
10
5
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
IE=0
f=1MHz
Ta=25˚C
I
—Ta
CBO
4
10
VCB=–20V
3
10
)
)
Ta
(
2
10
Ta=25˚C
(
CBO
I
CBO
I
10
1
0 18060 120
)
Ambient temperature Ta (˚C
)
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