Datasheet 2PD1820AS, 2PD1820AR, 2PD1820AG Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 May 22

1999 Apr 12

DISCRETE SEMICONDUCTORS

2PD1820A

NPN general purpose transistor

ook, halfpage

M3D187

1999 Apr 12 2

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 50 V)

• Low collector-emitter saturation voltage (max. 600 mV).

APPLICATIONS

• General purpose switching and amplification, especially
for portable equipment.

DESCRIPTION

NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.

MARKING

Note

1. ∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER MARKING CODE

(1)

2PD1820AQ A∗Q
2PD1820AR A∗R
2PD1820AS A∗S

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

Fig.1 Simplified outline (SC-70; SOT323) and

symbol.

handbook, halfpage

MAM336

Top view

2

1

3

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 60 V

V

CEO

collector-emitter voltage open base − 50 V

V

EBO

emitter-base voltage open collector − 5V

I

C

collector current (DC) − 500 mA

I

CM

peak collector current − 1A

I

BM

peak base current − 200 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 200 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

1999 Apr 12 3

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

amb

=25°C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

collector cut-off current IE= 0; VCB=20V − 10 nA

I

E

= 0; VCB=20V; Tj= 150 °C − 5 µA

I

EBO

emitter cut-off current IC= 0; VEB=4V − 10 nA

h

FE

DC current gain IC= 150 mA; VCE= 10 V; note 1

2PD1820AQ 85 170
2PD1820AR 120 240
2PD1820AS 170 340

h

FE

DC current gain IC= 500 mA; VCE= 10 V; note 1 40 −

V

CEsat

collector-emitter saturation voltage IC= 300 mA; IB= 30 mA; note 1 − 600 mV

C

c

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF

f

T

transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz;

note 1

150 − MHz

1999 Apr 12 4

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

PACKAGE OUTLINE

UNIT

A

1

max

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.1

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15

0.65

e

1.3

2.2

2.0

0.23

0.13

0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

w M

b

p

D

e

1

e

A

B

A

1

L

p

Q

detail X

c

H

E

E

v M

A

AB

y

0 1 2 mm

scale

A

X

12

3

Plastic surface mounted package; 3 leads SOT323

97-02-28

1999 Apr 12 5

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 Apr 12 6

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

NOTES

1999 Apr 12 7

Philips Semiconductors Product specification

NPN general purpose transistor 2PD1820A

NOTES

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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 Apr 12 Document order number: 9397 750 05588