Datasheet 2P4M Specification

Page 1
Thyristors INCHANGE
2P4M
PLASTIC MOLDED THYRISTOR
Features
·With TO-202 package K A G
Absolute maximum ratings(Ta=25)
SYMBOL
V V
I
T(AV)
I P
P
I
V
DRM RRM
TSM
GM G(AV) FGM
RGM
Repetitive peak off-state voltage Repetitive peak reverse voltage On-state current Surge non-repetitive on-state current 20 A Peak gate power dissipation
Average gate power dissipation 0.1 W
Peak gate forward current Peak gate reverse voltage 6 V
Tj Junction temperature -40 to + 125
PARAMETER MIN UNIT
400 (note:R 400 (note:R
2(Tc=77℃,θ=180。Single phase(1/2wave)
0.5 (f 50Hz, Duty ≤10%)
0.2 (f 50Hz, Duty ≤10%)
=1kΩ)
GK
=1kΩ)
GK
V V A
W
A
Electrical characteristics (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
RRM
I
DRM
Repetitive peak reverse current Repetitive peak off-state current
VRM=V VDM=V
,Tj=125℃,R
RRM
,Tj=125℃,R
DRM
=1kΩ
GK
=1kΩ
GK
100 100
VTM On-state voltage ITM=4A 1.8 V
V
IGT Gate-trigger current
=6V;RL=100Ω,RGK=1kΩ
DM
100
μA μA
μA
VGT Gate-trigger voltage VGD Gate non-trigger voltage
IH Holding current
R
Thermal resistance Junction to case 10
th(j-c)
V
=6V;RL=100Ω,RGK=1kΩ
DM
V
=1/2V
DRM
V
=24V; RGK=1kΩ,ITM=4A
D
,Tj=125℃,R
DRM
=1kΩ
GK
0.8 V
0.2 V 5 mA
/W
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