Datasheet 2N7052, 2N7053, NZT7053 Datasheet (Fairchild)

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Page 1

Discrete POWER & Signal

Technologies

2N7052 / 2N7053 / NZT7053

2N7052 NZT7053

TO-92

2N7053

TO-226

SOT-223

NPN Darlington Transistor

This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

CBO

EBO

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 100 V Collector-Base Voltage 100 V Emitter-Base Voltage 12 V Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N7052 2N7053 *NZT7053

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

ã 1997 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case 83.3 125 Thermal Resistance, Junction to Ambient 200 50 125

625

5.0

1,000

8.0

1,000

8.0

mW/°C

°C/W °C/W

Page 2

(BR)

NPN Darlington Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

CEO

CBO

EBO

CBO

CES

EBO

ON CHARACTERISTICS*

sat

CE(

BE(on)

Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V Collector-Base Breakdown Voltag e

= 100 µA, IE = 0

100 V Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 12 V Collector-Cutoff Current VCB = 80 V, IE = 0 0.1 Collector-Cutoff Current VCE = 80 V, IE = 0 0.2 Emitter-Cutoff Current VEB = 7.0 V, IC = 0 0.1

DC Current Gain IC = 100 mA, VCE = 5.0 V

= 1.0 A, VCE = 5.0 V

Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V

)

10,000

1,000 20,000

Base-Emitter On Voltage IC = 100 mA, VBE = 5.0 V 2.0 V

A A A

2N7052 / 2N7053 / NZT7053

SMALL SIGNAL CHARACTERISTICS

Transition Frequency IC = 100 mA, VCE = 5.0 V, 200 MHz Collector-Base Capa citance VCB = 10 V,f = 1.0 MHz

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

125 °C

0.001 0.01 0.1 1

h - TYPICAL PULSED CURRENT GAIN (K)

I - COLLECTOR CURRENT (A)

25 °C

- 40°C

2N7052 2N7053

8.0

Collector-Emitter Saturation V o l tag e vs Collector Current

= 1000

1.6

1.2

0.8

0.4

10 100 1000

CESAT

V - COLLECTOR EMITTER VOLTAGE (V)

25 °C

I - COLLECTOR CURRENT (mA)

- 40°C

125 °C

Page 3

Typical Characteristics (continued)

2N7052 / 2N7053 / NZT7053

NPN Darlington Transistor

(continued)

Base-Emitter Saturation

Voltage vs Collector Current

= 1000

1.6

1.2

0.8

0.4

BESAT

V - BASE EMITTER VOLTAGE (V)

10 100 1000

- 40°C 25 °C

125 °C

I - COLLECTOR CURRENT (mA)

Collector-Cutoff Current

vs. Ambient Temperature

100

V = 80V

0.1

CBO

0.01

I - COLLECTOR CURRENT (nA)

25 50 75 100 125

T - AMBIENT TEMPERATURE ( C)

Base Emitter ON Voltage vs

Collector Current

- 40°C

25 °C

125 °C

V = 5V

10 100 1000

I - COLLECTOR CURRENT (mA)

BEON

V - BASE EMITTER ON VOLTAGE (V)

1.6

1.2

0.8

0.4

Junction Capacitance vs

Reverse Bias Voltage

100

JUNCTION CAPACITANCE (pF)

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

Typical Collector-Emitter Leakage

Current vs Temperature

1000

V = 80V

V = 0

100

CES

I - LEAKAGE CU RRENT (nA)

0.1 04080120160

T - JUNCTION TEMPERATURE ( C)

Power Dissipation vs

Ambi en t T emper ature

0.75

TO-92

0.5

0.25

P - POWER DISSIPATION (W)

0 255075100125150

SOT-223

TO-226

TEMPERATURE ( C)

Page 4

TO-92 Tape and Reel Data

TO-92 Packaging Configuration: Figure 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORATION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

(FSCINT)

F63TNR Label sample

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL code

Reel A 2,000 D26Z

E2,000 D27Z

Ammo M 2,000 D74Z

P2,000 D75Z

Unit w eight = 0.22 gm Reel weight with co mpone nts = 1.04 kg Amm o weight with components = 1.02 kg Max q uantity p er intermediate bo x = 10,00 0 units

(TO-92) BULK PACKING INFORMATION

EOL

CODE

J18Z

J05Z

NO EOL

CODE

L34Z

DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

TO-5 OPTION STD NO LEAD CLIP TO-92 STANDARD

STRAIGHT FOR: PKG 92,

94 (NON PROELECTRON

SERIES), 96 TO-92 STANDARD

STRAIGHT FOR: PKG 94

(PROELECTRON SERIES

BCXXX, BFXXX, BSRXXX), 97, 98

NO LEADCLIP

LEADCLIP

DIMENSION

327mm x 158mm x 135mm

Immediate Box

Customized Label

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Intermediate Box

F63TNR Label

Customized Label

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Ammo boxes per

Intermediate Box

F63TNR Label

BULK OPTION

See Bulk Packing Information table

FSCINT Label

2000 units per EO70 box for

std option

375mm x 267mm x 375mm

Intermediate Box

333mm x 231mm x 183mm

Intermediate Box

Anti-static

Bubble Sheets

114mm x 102mm x 51mm

FSCINT Label

Customized Label

FSCINT Label

Customized Label

Immediate Box

530mm x 130mm x 83mm

FSCINT Label

Intermediate box

ustomized

C Label

10,000 units maximum

per intermediate box

for std option

5 EO70 boxes per intermediate Box

March 2001, Rev. B1

Page 5

TO-92 Tape and Reel Data, continued

TO-92 Reeling Style Configuration: Figure 2.0

Machine Option “A” (H)

Style “A”, D26Z, D70Z (s/h )

TO-92 Radial Ammo Packaging Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

Machine Option “E” (J)

Style “E”, D27 Z, D71 Z (s/ h)

FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B

Page 6

TO-92 Tape and Reel Data, continued

TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0

P Pd

P1 F1

User Direc tion of Feed

TO-92 Reel Configuration: Figure 5.0

ITEM DESCRIPTION

Base of Package to Lead Bend Compon en t He ig ht Lead Clinch Height Compon en t Ba s e Heig ht Compon en t Al ig nm e nt ( sid e/s id e ) Compon en t Al ig nm e nt ( fron t /b ac k ) Compon en t Pi tc h Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out

SYMBOL

b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S

DIMENSION

0.098 (m ax )

0.928 (+ /- 0.025)

0.630 (+ /- 0.020)

0.748 (+ /- 0.020)

0.040 (m ax )

0.031 (m ax )

0.500 (+ /- 0.020)

0.500 (+ /- 0.008)

0.150 (+ 0 .00 9, -0.010)

0.247 (+ /- 0.007)

0.104 (+ /- 0 .010)

0.018 (+ 0 .00 2, -0.003)

0.429 (m ax )

0.209 (+ 0 .05 1, -0.052)

0.032 (+ /- 0.006)

0.021 (+ /- 0.006)

0.708 (+ 0 .02 0, -0.019)

0.236 (+ /- 0.012)

0.035 (m ax )

0.360 (+ /- 0.025)

0.157 (+ 0 .00 8, -0.007)

0.004 (m ax )

F63TNR Label

Customized Label

ELECTROSTATIC

SENSITIVE DEVICES

Note : All dimensions are in inch es.

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

Reel Diame t er D1 13.975 14.025 Arbor Hol e Di am et er ( Standard) D2 1.160 1.200

Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Wid th W2 1.630 1.690 Hub to Hub Center Width W 3 2.090

Note: All dimensions are inches

(Small Hole) D2 0.650 0.700

July 1999, Rev. A

Page 7

TO-92 Package Dimensions

TO-92 (FS PKG Code 92, 94, 96)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.1977

January 2000, Rev. B

Page 8

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS EnSigna

FACT™ FACT Quiet Series™



FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ P ACMAN™ POP™

PowerTrench



QFET™ QS™ QT Optoelectronics™

Quiet Series™ SILENT SWITCHER SMART ST ART™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8



SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G