Datasheet 2N 7002KT1G ONS Datasheet

2N7002K, 2V7002K

s

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low R

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

DS(on)

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

Compliant

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R

(BR)DSS

60 V

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

SIMPLIFIED SCHEMATIC

Gate

1

MAX

ID MAXV

380 mA

3

Drain

MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Drain Current (Note 1)

Steady State 1 sq in Pad T

Drain Current (Note 2)

Steady State Minimum Pad T

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage

Temperature Range
Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)
Gate−Source ESD Rating

(HBM, Method 3015)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

I

= 25°C

A

TA = 85°C

= 25°C

A

TA = 85°C

D

I

D

P

D

I

DM

TJ, T

STG

S

T

L

ESD 2000 V

60 V

±20 V

380
270

320
230

420
300

1.5 A

−55 to
+150

300 mA
260 °C

mA

mA

mW

°C

Source

2

(Top View)

MARKING DIAGRAM

3

1

2

SOT−23
CASE 318
STYLE 21

704 = Specific Device Code*
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend­ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.

& PIN ASSIGNMENT

Drain

3

704 MG

G

21

Gate

Source

ORDERING INFORMATION

Device Package Shipping

2N7002KT1G 3000 / Tape & Reel

2V7002KT1G 3000 / Tape & ReelSOT−23

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

SOT−23

(Pb−Free)

(Pb−Free)

†

© Semiconductor Components Industries, LLC, 2015

April, 2015 − Rev. 13

1 Publication Order Number:

2N7002K/D

2N7002K, 2V7002K

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State (Note 3) R
Junction−to−Ambient − t ≤ 5 s (Note 3) 92
Junction−to−Ambient − Steady State (Note 4) 417
Junction−to−Ambient − t ≤ 5 s (Note 4) 154

3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

q

JA

300

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient
Zero Gate Voltage Drain Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 60 V

DS

VGS = 0 V,

= 50 V

V

DS

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±20 V ±10
VDS = 0 V, VGS = ±10 V 450 nA

VDS = 0 V, VGS = ±5.0 V 150 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Negative Threshold Temperature

Coefficient
Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5

Forward Transconductance g

FS

VDS = 5 V, ID = 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz,

V

DS

VGS = 4.5 V, VDS = 10 V;

I

= 200 mA

D

SWITCHING CHARACTERISTICS, VGS = V (Note 6)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDD = 25 V,
I

= 500 mA, RG = 25 W

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

VGS = 0 V,

I

= 200 mA

S

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

60 V

71 mV/°C

TJ = 25°C 1 mA

TJ = 125°C 10

TJ = 25°C 100 nA

1.0 2.3 V

4.0 mV/°C

24.5 45

= 20 V

4.2 8.0

2.2 5.0

0.7

0.1

0.3

0.1

12.2

9.0

55.8
29

TJ = 25°C 0.8 1.2
TJ = 85°C 0.7

mA

pF

nC

ns

V

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2

2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1.6

1.2

0.8

, DRAIN CURRENT (A)

0.4

D

I

7.0 V

6.0 V

0

VGS = 10 V

9.0 V

8.0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

3.2
VGS = 4.5 V

2.8

2.4

2.0

1.6

1.2

0.8

TJ = 125°C

TJ = 85°C

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

TJ = 25°C

TJ = −55°C

1.2

0.8

0.4

, DRAIN CURRENT (A)

D

I

6420

0

3.2

2.8

2.4

2.0

1.6

1.2

0.8

TJ = 25°C

TJ = 125°C

VGS = 10 V

TJ = −55°C

6420

TJ = 125°C

TJ = 85°C

TJ = 25°C

TJ = −55°C

0.4

, DRAIN−TO−SOURCE RESISTANCE (W)R

0

DS(on)

R

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Drain Current and

Temperature

2.4

2.0

1.6

1.2

0.8

, DRAIN−TO−SOURCE RESISTANCE (W)

0.4

DS(on)

ID = 500 mA

ID = 200 mA

VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

0.4

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

1.21.00.80.60.40.20
R

2.2

1.8

1.4

, DRAIN−TO−SOURCE

1.0

DS(on)

R

RESISTANCE (NORMALIZED)

108642

0.6

, DRAIN CURRENT (A)

I

D

Figure 4. On−Resistance vs. Drain Current and

Temperature

ID = 0.2 A

VGS = 4.5 V

VGS = 10 V

1251007550250−25−50

Figure 6. On−Resistance Variation with

Temperature

1.21.00.80.60.40.20

150

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3

2N7002K, 2V7002K

.8

)

I

, SOURCE CURRENT (A)

30

C, CAPACITANCE (pF)

0

TYPICAL CHARACTERISTICS

5

C

iss

TJ = 25°C

= 0.2 A

I

D

4

20

TJ = 25°C

= 0 V

V

C

oss

10

C

rss

0

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

GS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

10

VGS = 0 V

1

TJ = 25°CTJ = 85°C

0.1

S

0.01

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

3

2

1

, GATE−TO−SOURCE VOLTAGE (V

GS

0

201612840

V

Qg, TOTAL GATE CHARGE (nC)

0.60.40.20

0

Drain−to−Source Voltage vs. Total Charge

2.5

2.4

ID = 250 mA

2.3

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

, THRESHOLD VOLTAGE (V)

1.3

1.2

GS(TH)

1.1

V

1.21.00.80.60.4

1.0

TJ, JUNCTION TEMPERATURE (°C)

15

1251007550250−25−50

Figure 10. Threshold Voltage with

Temperature

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4

2N7002K, 2V7002K

00

1000

00

TYPICAL CHARACTERISTICS

Duty Cycle = 0.5

100

0.2

0.1

0.05

0.02

10

0.01

1

SINGLE PULSE

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.1

JC(t)

q

0.000001 0.00001 0.0001 0.001 0.01 0.1 10

R

t, PULSE TIME (s)

Figure 11. Thermal Response − 1 sq in pad

1000

Duty Cycle = 0.5

0.2

100

0.1

0.05

0.02

10

1 10 100

0.01

1

SINGLE PULSE

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.1

JC(t)

q

0.000001 0.00001 0.0001 0.001 0.01 0.1 10

R

t, PULSE TIME (s)

1 10 100

Figure 12. Thermal Response − minimum pad

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5

2N7002K, 2V7002K

P

al

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015

c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047

e 1.78 1.90 2.04 0.070

L 0.10 0.20 0.30 0.004
L1

H

E

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10q°°°°

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT

0.95

0.95

0.037

0.9

0.035

0.8

0.031

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

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