Page 1
SEMICONDUCTOR
TECHNICAL DATA
2N7000K
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. SOURCE
2. GATE
3. DRAIN
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=60V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=20V, VDS=0V
- - 10
A
Gate-Body Leakage, Reverse
I
GSSR
VGS=-20V, VDS=0V
- - -10
A
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
500
mA
Pulsed
(Note 1)
I
DP
2000
Drain Power Dissipation
P
D
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
D
G
S
Page 2
2N7000K
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 2)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
1.1 - 2.35 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.2 1.8
VGS=5V, ID=50mA
- 1.5 2.1
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.6 0.9
V
VGS=5V, ID=50mA
- 0.075 0.105
On State Drain Current
I
D(ON)
VGS=10V, VDS= 2 V
DS(ON)
500 - - mA
Forward Transconductance
g
FS
VDS=10V, ID=500mA
200 580 - mS
Drain-Source Diode Forward Voltage
V
SD
VGS=0V, IS=200mA (Note1)
- 760 1150 mV
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 52.1 -
pFReverse Transfer Capacitance
C
rss
- 3.9 -
Output Capacitance
C
oss
- 7.7 -
Switching Time
Turn-On Time
t
on
VDD=30V, RL=155 , ID=190mA,
V
GS
=10V
- 11.1 -
nS
Turn-Off Time
t
off
- 22.5 -
Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1%
SWITCHING TIME TEST CIRCUIT
V
V
IN
V
GS
G
D
DD
t
t
d(on)
on
t
r
t
d(off)
t
off
t
f
90%90%
R
L
V
OUT
OUTPUT
V
OUT
10%
INVERTED
90%
50%
S
INPUT
10%
V
IN
50%
PULSE WIDTH
Page 3
2N7000K
Revision No : 1
ID - V
1.5
COMMON SOURCE
C
Ta = 25
1.2
(A)
D
0.9
0.6
0.3
DRAIN CURRENT I
0.0
0.0
1.0 2.0 3.0 4.0 5.0
4.0
3.5
3.0
2.5
( )
2.0
DS
R
1.5
1.0
0.5
DRAIN SOURCE ON - RESISTANCE
0.0
-100
JUNCTION TEMPERATURE Tj ( )
6V
7V
R
DS(ON)
=10V
V
GS
I
=500mA
D
0 50 100-50 150
10V
DS
- T
j
VGS=5V
=50mA
I
D
4V
5V
( )
DS
6.0
5.0
4.0
3.0
2.0
R
VGS = 3V
DS(ON)
4V
5V
- I
D
COMMON SOURCE
Ta = 25
C
1.0
V
GS
= 3V
0.0
DRAIN SOURCE ON - RESISTANCE R
0.1 0.2 0.3 0.4 0.5 0.6
6V
7V 10V
DRAIN-CURRENT ID (A)DRAIN-SOURCE VOLTAGE VDS (V)
Vth - T
j
1.4
1.3
Common Source
V
GS=VDS
ID=250 A
ยต
1.2
1.1
1
0.9
0.8
NORMALIZED GATE
0.7
0.6
SOURCE THRESHOLD VOLTAGE Vth (V)
-100
C
JUNCTION TEMPERATURE Tj ( )
0 50 100-50 150
C
1.0
COMMON SOURCE
=10V
V
DS
0.8
(A)
D
0.6
0.4
0.2
DRAIN CURRENT I
0.0
012345
DRAIN-SOURCE VOLTAGE VGS (V)
I
- V
D
GS
125
I - V
SSD
1
-55
C
25
C
C
S
V =1V
GS
0.1
V =0V
GS
REVERSE DRAIN CURRENT I (A)
0.01
0.0
0.3 0.6 0.9 1.2 1.5
BODY DIODE FORWARD VOLTAGE VSD (V)
Page 4
2N7000K
Revision No : 1
GS
10
COMMON SOURCE
V
=30V
DS
=0.3A
I
8
D
Ta=25 C
6
V - Q
GS g
1000
100
C - V
COMMON SOURCE
V =0V
GS
f=1MHz
Ta=25 C
DS
C
iss
4
2
GATE-SOURCE VOLTAGE V (V)
0
0
2 46810
GATE CHARGE Q (nC)
SOA
10
Tj=150 , Ta=25 ,Single Pulse
C C
1
D
0.1
0.01
0.001
DRAIN CURRENT I (A)
0.0001
0.001 0.01 10 10010.1
DRAIN-SOURCE VOLTAGE V (V)
g
PW =1ms
PW =10ms
PW =100ms
PW 10
DS
DC
C
10
CAPACITANCE C (pF)
oss
C
rss
1
05101520 25
DRAIN-SOURCE VOLTAGE V (V)
P - Ta
D
700
D
600
500
400
300
200
100
0
DRAIN POWER DISSIPATION P (mW)
02550
75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
DS
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