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120101
TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
2N6989
2N6989U
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
2N6989
2N6989U
2N6990
Operating & Storage Junction Temperature Range
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
(3)
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 75 Vdc; Ic= 10 µAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 6.0Vdc; Ic= 10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
(1)
Ratings Symbol Value Units
(3)
(3)
(3)
(2)
(2)
Characteristics Symbol Min. Max. Unit
(2)
2N6990
V
CEO
V
CBO
V
EBO
IC
PD
T
T
,
op
stg
6.0 Vdc
800 mAdc
1.5
1.0
0.4
-65 to +200 0C
50 Vdc
75 Vdc
V
(BR)
CEO
I
CBO
I
EBO
W
Qualified Level
14 PIN FLAT PACK*
*See appendix A for package
outline
50 Vdc
JAN
JANTX
JANTXV
JANS
TO- 116*
2N6989
20 PIN LEADLESS*
2N6989U
2N6990
10
10
10
10
ηAdc
µAdc
ηAdc
µAdc
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Page 2
120101
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
= 0.1 mAdc, V
C
I
= 1.0 mAdc, V
C
I
= 10 mAdc, V
C
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
= 10 Vdc
CE
= 10 Vdc
CE
= 10 Vdc
CE
(4)
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
= 20 mAdc, V
C
Forward Current Transfer Ratio
I
= 1.0 mAdc, V
C
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
= 10 Vdc, f = 100 MHz
CE
= 10 Vdc, f = 1.0 kHz
CE
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
hFE
V
CE(sat)
V
BE(sat)
hfe
hfe
C
obo
C
ibo
50
75
100
100
30
0.6
2.5
50
8.0 pF
25 pF
325
300
0.3
1.0
1.2
2.0
8.0
Vdc
Vdc
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