Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6836
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Motor controls
·Deflection circuits
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 20 A
IB Base current 10 A
IBM Base current-peak 15 A
PC Collector power dissipation TC=25℃ 175 W
Collector-base voltage Open emitter 850 V
Collector-emitter voltage Open base 450 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 200 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.0
th j-c
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6836
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEV
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 400 pF
Collector-emitter sustaining voltage IC=0.1A ;IB=0 450 V
Collector-emitter saturation voltage IC=5A; IB=0.7A 1.2 V
=10A; IB=1.0A
I
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current VEB=6V; IC=0 1.0 mA
DC current gain IC=10A ; VCE=5V 8 30
DC current gain IC=15A ; VCE=5V 5
C
T
=100℃
C
=10A; IB=1.0A
I
C
=100℃
T
C
=850V; VBE=-1.5V
V
CE
TC=100℃
2.5
3.0
1.5
1.5
0.25
1.5
V
V
mA
fT Transition frequency IC=0.25A ; VCE=10V;f=10MHz 10 75 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6836
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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