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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6833
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 450V(Min)
PARAMETER VALUE UNIT
V
CEV
V
CEO(SUS)
V
EBO
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak 10 A
IB Base Current-Continuous 4 A
IBM Base Current-Peak 8 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 150 ℃
T
stg
Collector-Emitter Voltage 850 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
80 W
Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case
PARAMETER MAX UNIT
1.56 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE-1
h
FE-2
fT Current Gain-Bandwidth Product
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V
1
Collector-Emitter Saturation Voltage
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA
Emitter Cutoff Current VEB= 6.0V; IC=0 1.0 mA
DC Current Gain IC= 3A ; VCE= 5V 7.5 30
DC Current Gain IC= 5A ; VCE= 5V 5
PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100℃
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100℃
V
= 850V;V
CEV
V
= 850V;V
CEV
IC= 0.25A ;VCE= 10V; f
= 1.5V
BE(off)
= 1.5V;TC=100℃
BE(off)
test
=10MHz
15 75 MHz
2.5
2.5
1.5
1.5
0.25
1.5
V
V
mA
COB Output Capacitance
Switching times;Resistive Load
td
tr
ts
tf
Delay Time 0.03 0.1 μs
Rise Time 0.1 0.3 μs
Storage Time 1.0 3.0 μs
Fall Time
IE= 0; VCB= 10V; f
IC= 3A , VCC= 250V;
IB1= 0.4A; IB2= -0.8A;
PW= 30μs; RB2= 8Ω
Duty Cycle≤2.0%
test
=1.0kHz
20 200 pF
0.06 0.3 μs
isc Website：www.iscsemi.cn
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