Datasheet 2n6790 Datasheet

G

D

S

2N6790

Data Sheet December 2001

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

The 2N6790 is an N-Channel enhancement mode silicon gate power MOS ﬁeld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit.

Ordering Information

PART NUMBER PACKAGE BRAND

2N6790 TO-205AF 2N6790

NOTE: When ordering, include the entire part number.

Features

• 3.5A, 200V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.800 Ω

Components to PC Boards”

Symbol

Packaging

JEDEC TO-205AF

DRAIN (CASE)

GATE

SOURCE

µ

Ω

≅

θ

2N6790

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

2N6790 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

T

= 100

C

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 20k Ω) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Above T

o

= 25

C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/

C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DS

DGR

D

DM

GS

S

SM

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

pkg

200 V 200 V

3.5 A

2.25 A 14 A

±20 V

3.5 A 14 A 20 W

-55 to 150

300 260

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 125

1. T

Electrical Speciﬁcations

o

C.

o

T

= 25

C, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Threshold Voltage V

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On-Voltage (Note 2) V

Drain to Source On Resistance r

Diode Forward Voltage V

Forward Transconductance (Note 2) g

Input Capacitance C

Output Capacitance C

Reverse-Transfer Capacitance C

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DSS

GS(TH)

DSS

GSS

DS(ON)

SD

fs

ISS

OSS

RSS

d(ON)

r

d(OFF)

f

Safe Operating Area SOA V

Thermal Resistance Junction to Case R

JC

Thermal Resistance Junction to Ambient R

I

= 0.25mA, V

D

V

= V

GS

DS

V

= 200V, V

DS

V

= 160V, V

DS

V

= ± 20V, V

GS

I

= 3.5A, V

D

I

= 2.25A, V

D

I

= 2.25A, V

D

I

= 3.5A, V

S

I

= 2.25A, V

D

V

= 0V, V

GS

f = 1MHz

= 0V 200 - - V

GS

, I

= 1.0mA 2 - 4 V

D

= 0V - - 250

GS

= 0V T

GS

= 0 - - 100 nA

DS

= 10V - - 2.8 V

GS

= 10V - .5 0.800

GS

= 10V T

GS

= 0V 0.7 - 1.5 V

GS

= 5V 1.5 2.25 4.5 S

DS

= 25V

DS

= 125

C

= 125

C

o

C - - 1000

o

C - - 1.5

200 450 600 pF

60 150 300 pF

15 40 80 pF

I

= 2.25A

D

V

GS

74V, R

= 50 Ω

G

- - 40 ns

- - 50 ns

DS

V

DS

= 160V, I

= 5.7V, I

= 125mA 20 - - W

D

= 3.5A 20 - - W

D

- - 6.25

Free Air Operation - - 175

JA

o

A

C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Reverse Recovery Time t

Reverse Recovered Charge Q

rr

RR

T

TJ = 150

NOTES:

2. Pulse test: pulse width ≤ 300 µ s, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

= 150

J

o

C, I

= 3.5A, dl

SD

= 3.5A, dl

SD

/dt = 100A/µs 350 - ns

SD

/dt = 100A/µs 2.3 - µC

SD

TC, CASE TEMPERATURE (oC)

50 75 10025 150

0

I

D

,

DRAIN CURRENT (A)

125

1

2

3

4

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

25 50 750 100

0

I

D

, DRAIN CURRENT (A)

10V

80µs PULSE TEST

4

8V

7V

VGS = 6V

5V

4V

8

12

2N6790

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Speciﬁed

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1.0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

50

10

1

, DRAIN CURRENT (A)

D

I

0.1

0.05

FIGURE 4. FORWARD BIAS SAFE OPERATING AREAS FIGURE 5. OUTPUT CHARACTERISTICS

0.5

0.2

0.1

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

T

1

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

OPERATION IN THIS AREA LIMITED BY r

TC = 25oC T

= MAX RATED

J

SINGLE PULSE

1 10 100 1000

DS(ON)

VDS, DRAIN TO SOURCE (V)

10µs

100µs

1.0ms

10ms

100ms

DC

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-2

10

0.1 1 10

θJC

1/t2

x Z

θJC

x R

θJC

+ T

C

1.4

1.0

0.6

-40 0 40 120 150

T

J,

JUNCTION TEMPERATURE (oC)

NORMALIZED ON RESISTANCE

2.2

0.2 80

1.8

VGS = 10V

ID = 2A

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

1000

800

600

400

200

0

10

C

ISS

C

OSS

C

RSS

20 30 40 50

VGS = 0V, f = 1MHz C

ISS

= CGS + C

GD

C

RSS

= C

GD

C

OSS

= CDS + C

GD

0

2N6790

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

12

80µs PULSE TEST

8

4

, DRAIN CURRENT (A)

D

I

0

2468010

VDS, DRAIN TO SOURCE VOLTAGE (V)

10V

9V 8V

VGS = 7V

6V

5V

4V

16

V

> I

DS

80µs PULSE TEST

12

8

4

ON-STATE DRAIN CURRENT (A) ,

D(ON)

I

0

x r

D(ON)

24 8

V

GS,

MAX

DS(ON)

GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.5 PULSE DURATION = 2.0µs

INITIAL T

1.0

= 25oC

J

VGS = 10V

25oC

-55oC

125oC

6

0.5

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

DS(ON)

r

0

01015

5

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25

1.15

1.05

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.85

0.75

-40 40 80 120

TJ, JUNCTION TEMPERATURE (oC)

0 160

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VGS = 20V

20

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

VOLTAGE vs JUNCTION TEMPERATURE

2N6790

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

2

10

TJ = 25oC

TJ = 150oC

10

TJ = 150oC

, REVERSE DRAIN CURRENT (A)

DR

I

1

01234

TJ = 25oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

, TRANSCONDUCTANCE (S) g

5.0

4.25

3.75

3.0

2.25

1.50

fs

0.75

0

80µs PULSE TEST

24 6 8010

ID, DRAIN CURRENT (A)

TJ = -55oC

TJ = 25oC

TJ = 125oC

12 14

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 7A

15

10

VDS = 160V VDS = 100V

= 40V

V

DS

5

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

4 8 12 16020

Qg, TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

V

DD

V

DS

BV

DSS

t

P

I

AS

t

AV

0

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

10%

PULSE WIDTH

V

GS

0

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

V

DD

I

G(REF)

0

2N6790

Test Circuits and Waveforms

V

DS

L

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

AS

R

G

DUT

0V

P

I

AS

t

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

+

V

DD

-

R

L

+

V

R

G

DD

-

DUT

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

(ISOLATED SUPPLY)

SAME TYPE AS DUT

DUT

CURRENT

I

D

SAMPLING

V

DS

CURRENT

REGULATOR

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4