Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6702
DESCRIPTION
·With TO-220 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for converters,inverters,
pulse-width-modulated regulators
and a variety of power switching
circuits.
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current(peak) 10 A
IB Base current 6 A
PT Total power dissipation
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 90 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
Storage temperature -65~150
50 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 2.5 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6702
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE sat
I
CEV
I
EBO
h
FE-1
h
FE-2
Cob Output capacitance IE=0 ; f=0.1MHz,VCB=10V 50 150 pF
Collector-emitter sustaining voltage IC=0.01A ;IB=0 90 V
Collector-emitter saturation voltage IC=5A;IB=0.5A 0.8 V
Collector-emitter saturation voltage IC=7A;IB=0.7A 1.5 V
Base-emitter saturation voltage IC=5A;IB=0.5A 1.5 V
=140V;VBE=1.5V
V
Collector cut-off current
Emitter cut-off current VBE=7V; IC=0 0.1 mA
DC current gain IC=0.2A ; VCE=2V 30
DC current gain IC=5A ; VCE=2V 20
CE
TC=125℃
0.1
1.0
mA
fT Transition frequency IC=0.5A ; VCE=10V 50 200 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6702
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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