Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6686
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for high-power switching
circuits applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 25 A
ICM Collector current-peak 50 A
PC Collector power dissipation TC=25℃ 200 W
Tj Junction temperature 200 ℃
Collector-base voltage Open emitter 260 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 8 V
℃)
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875
th j-c
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6686
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
fT Transition frequency IC=1A ; VCE=10V 20 100 MHz
Collector-emitter sustaining voltage IC=0.2A ;IB=0 160 V
Collector-emitter saturation voltage IC=25A; IB=2.5A 1.5 V
Base-emitter saturation voltage IC=25A; IB=2.5A 1.8 V
Collector cut-off current VCE=260V; VBE=-1.5V 50 μA
Emitter cut-off current VEB=8V; IC=0 100 μA
DC current gain IC=1A ; VCE=2V 30
DC current gain IC=10A ; VCE=2V 25 100
DC current gain IC=25A ; VCE=2V 15
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6686
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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