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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2N6674/6675
DESCRIPTION
·High Power Dissipation
·High Switching Speed
·Collector-Emitter Breakdown Voltage-
: V
APPLICATIONS
Designed for high voltage switching applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 300V(Min)- 2N6674
(BR)CEO
= 400V(Min)- 2N6675
PARAMETER VALUE UNIT
2N6674 450
V
CBO
V
CEO
V
CEX
V
EBO
IC Collector Current-Continuous 15 A
IB Base Current-Continuous 5.0 A
PC
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage
2N6675 650
2N6674 300
Collector-Emitter Voltage
2N6675 400
2N6674 450
Collector-Emitter Voltage
2N6675 650
Emitter-Base Voltage 7 V
Collector Power Dissipation@Ta=25℃
Collector Power Dissipation@TC=25℃
Storage Temperature -65~200 ℃
6
175
THERMAL CHARACTERISTICS
V
V
W
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case
PARAMETER MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2N6674/6675
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CEX
I
CBO
PARAMETER CONDITIONS MIN MAX UNIT
Collector-Emitter
Breakdown Voltage
Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V
Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 5.0 V
Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V
Collector
Cutoff Current
Collector
Cutoff Current
2N6674 300
IC= 200mA ; IB= 0
2N6675
2N6674 VCE= 450V; VBE= -1.5V 0.1
2N6675 VCE= 650V; VBE= -1.5V
2N6674 VCB= 450V; IE= 0 1.0
2N6675 VCB= 650V; IE= 0
400
0.1
1.0
V
mA
mA
I
Emitter Cutoff Current VEB= 7V; IC= 0 2.0 mA
EBO
h
DC Current Gain IC= 1A ; VCE= 3V 15 40
FE-1
h
DC Current Gain IC= 10A ; VCE= 2V 8 20
FE-2
COB Output Capacitance
IE= 0; VCB= 10V; f
= 1MHz
test
500 pF
isc Website：www.iscsemi.cn
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