Datasheet 2n6661-2 Datasheet

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Page 1

New Product

N-Channel 90-V (D-S) MOSFET

2N6661-2

Vishay Siliconix

PRODUCT SUMMARY

Part

Number

2N6661-2 90

TO-205AD

2 3

min. (V) R

(TO-39)

To p View

2N6661-2

DS(on)

4 at V

max. (Ω)V

= 10 V

“S” = Siliconix Logo f = Factory Code

xxyy = Date Code

(V) ID (A)

GS(th)

0.8 to 2 0.86

Device Marking

Side View

2N6661-2

“S” fxxyy

FEATURES

• Low On-Resistance: 3.6 Ω

• Low Threshold: 1.6 V

• Low Input Capacitance: 35 pF

• Fast Switching Speed: 6 ns

• Low Input and Output Leakage

BENEFITS

• Low Offset Voltage

• Low-Voltage Operation

• Easily Driven Without Buffer

• High-Speed Circuits

• Low Error Voltage

APPLICATIONS

• Direct Logic-Level Interface: TTL/CMOS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

• Battery Operated Systems

• Solid-State Relays

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 2N6661-2 Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient

Operating Junction and Storage Temperature Range

Notes: a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC.

= 150 °C)

= 25 °C

= 100 °C

= 25 °C

thJA

, T

stg

± 20

0.86

0.54 ± 3

6.25

0.725 170

- 65 to 150

°C/W

°C

Document Number: 68632 S-81302-Rev. A, 09-Jun-08

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Page 2

New Product

2N6661-2

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Typ.

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

GS(th)

GSS

D(on)

DS(on)

DSS

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Drain-Source Capacitance

Switching

Tur n - On T i m e

Turn-Off Time

iss

oss

rss

OFF

Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC.

VGS = 0 V, ID = 10 µA

= VGS, ID = 1 mA

= - 55 °C

= 125 °C

VDS = 0 V, VGS = ± 20 V

= 125 °C

VDS = 72 V, VGS = 0 V

= 72 V, VGS = 0 V

= 125 °C

VDS = 10 V, VGS = 10 V

VGS = 5 V, ID = 0.3 A

= 10 V, ID = 1 A

= 125 °Cd

VDS = 7.5 V, ID = 0.475 A

IS = 0.86 A, V

VDS = 25 V, V

= 0 V

= 0 V,

f = 1 MHz

VDD = 25 V, RL = 23 Ω

≅ 1 A, V

= 23 Ω

GEN

= 10 V

Unit Min. Max.

125 90

Limits

1.6 0.8 2

1.8 2.5

1.3 0.3

± 100

± 500

100

µA

1.8 A

3.8 5.3

3.6 4

6.7 7.5

340 170 mS

0.9 0.7 1.4 V

35 50

15 40

210

610

810

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68632

S-81302-Rev. A, 09-Jun-08

Page 3

New Product

2N6661-2

Vishay Siliconix

PROCESS FLOW

Description

Internal Visual M-2072 Condition B

Die Shear

Stabilization Bake M-1032 Temperature Cycling M-1051 Condition G Constant Acceleration M-2006 Interim Electrical Go-no-Go Burn-In (HTGB) M1042_Condition B (48 h) Burn-In (HTRB) M1042_Condition A (160 h) Final Electrical Go-no-Go Fine Leak M-1071 Condition G1 Gross Leak M-1071 Condition C1 External Visual M-2071 S/S = 45/0 Group A Per MIL-PRF-19500 Sampling plan for Group A

Inspection Group B

Per MIL-PRF-19500 Group C

Per MIL-PRF-19500

Deltas Option

Solder Dip Option

Notes: a. Test performed on line during assembly procedure (monitor). b. Per spec is a reference to Vishay Siliconix data sheet or customer

SCD whichever applies.

MIL-STD 750 Methods

M-2017

per spec.

MANUFACTURING FLOW

Internal Visual

M-2072 Condition B

↓

M2017 (assembly monitor)

Die Shear

↓

High Temp Life (Stab Bake)

M-1032

↓

Temperature Cycling

M-1051 Condition G

↓

Constant Acceleration

(SI imposed) M-2006

↓

Interim Electrical

Go-no-Go

↓

Burn-in HTGB / HTRB

M-1042 48 h/160 h

↓

Final Electrical

Go-no-Go

↓

Fine and Gross Leak

M-1071 Condition G1

and Condition C1

↓

External Visual

M-2071 S/S = 45/0

↓

Per MIL-PRF-19500 Sampling plan

for Group A Inspection Go-no-Go

Group A

↓

Per MIL-PRF-19500 Table E-VIB

Group B

Go-no-Go

↓

Per MIL-PRF-19500 Table E-VII

Group C

Go-no-Go

Document Number: 68632 S-81302-Rev. A, 09-Jun-08

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Page 4

New Product

2N6661-2

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0

0.8

0.6

0.4

- Drain Current (A)

0.2

0.5

0.4

0.3

0.2

- Drain Current (A)

0.1

VGS = 10 V

6 V

5 V

4 V

3 V

0 1.0 2.0 3.0 4.0 5.0

VDS - Drain-to-Source Voltage (V)

2 V

Ohmic Region Characteristics

125 °C

25 °C

VDS= 15 V

100

- Drain Current (mA)

- On-Resistance (Ω)

DS(on)

VGS = 3 V

0 0.4 0.8 1.2 1.6 2.0

2.8 V

2.6 V

2.4 V

2.2 V

2.0 V

1.8 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics for Low Gate Drive

ID= 0.1 A

0.5 A

1.0 A

- Drain-Source On-Resistance (Ω) 2

DS(on)

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468

VGS - Gate-Source Voltage (V)

Transfer Characteristics

VGS= 10 V

1.0 1.5 2.0

ID - Drain Current (A)

On-Resistance vs. Drain Current

0120

048 12 16 20

VGS - Gate-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

2.25

2.00

1.75

1.50

1.25

(Normalized)

- Drain-Source On-Resistance

1.00

DS(on)

0.75

5 .25.00

0.50

VGS= 10 V

- 50 - 10 30 70 110 150

TJ - Junction Temperature (°C)

Normalized On-Resistance vs. Junction Temperature

Document Number: 68632

S-81302-Rev. A, 09-Jun-08

Page 5

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

VGS= 5 V

125

100

2N6661-2

Vishay Siliconix

VGS= 0 V

f = 1 MHz

- Drain Current (mA)

0.1

0.01

15.0

12.5

10.0

7.5

5.0

- Gate-to-Source Voltage (V)

2.5

0.5

ID= 1.0 A

TJ = 150

125 °C

25 °C

1.0 1.5

VGS - Gate-to-Source Voltage (V)

Threshold Region

VDS= 45 V

- 55 °C

72 V

2.0

C - Capacitance (pF)

100

VDD = 25 V

= 23

VGS = 0 to 10 V

= 1.0 A

t - Switching Time (ns)

d(off)

d(on)

iss

oss

rss

20 30 40

VDS - Drain-to-Source Voltage (V)

Capacitance

05010

200 300 400

0050010

Qg - Total Gate Charge (pC)

Gate Charge

211.0

ID - Drain Current (A)

Load Condition Effects on Switching

1.0

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

Single Pulse

0.05

0.02

0.01

Notes:

1. Duty Cycle, D =

2. Per Unit Base = R °

3. T

- TC = PDMZ

thJC

= 20 C/W

(t)

0.01

0.1 10 K

0010.1 K 101

t1- Square Wave Pulse Duration (s)

Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661-2)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68632.

Document Number: 68632

www.vishay.com

S-81302-Rev. A, 09-Jun-08

Page 6

TO-205AD (TO-39 TALL LID)

Seating

Plane

Package Information

Vishay Siliconix

INCHES MILLIMETERS

Dim Min Max Min Max

CD CH HD LC LD

L1 L2

P Q

Dimensions (see notes 1, 2, 9, 11, 12)

ECN: S-40373—Rev. C, 15-Mar-04 DWG: 5511

0.305 0.335 7.75 8.51

0.240 0.260 6.10 6.60

0.335 0.370 8.51 9.40

0.200 TP 5.08 TP 6

0.016 0.021 0.41 0.53 7, 8

0.500 0.750 12.70 19.05 7, 8

0.016 0.019 0.41 0.48 7, 8

— 0.050 — 1.27 7, 8

0.250 — 6.35 — 7, 8

0.100 — 2.54 — 5

— 0.050 — 1.27 4

— 0.010 — 0.25 9

0.029 0.045 0.74 1.14 3

0.028 0.034 0.71 0.86 2

45_ TP 45_ TP 6

Notes

NOTES:

1. Dimensions are in inches. Metric equivalents are given for general

∝

information only.

2. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm).

3. Dimension TL measured from maximum HD.

4. Outline in this zone is not controlled.

5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at guage plane 0.054+0.001, −0.000 (1.37+0.03, −0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

7. LU applies between L1 and L2, LD applies between L2 and L maximum. Diameter is uncontrolled in L1 and beyond LL minimum.

8. All three leads.

9. Radius (r) applies to both inside corners of tab.

10. Drain is electrically connected to the case.

Document Number: 71367 09-Mar-04

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Page 7

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1