Page 1
Ordering Information
2N6660
2N6661
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
60V 3.0Ω 1.5A 2N6660
90V 4.0Ω 1.5A 2N6661
DS(ON)
(max) (min) TO-39
I
D(ON)
Order Number / Package
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■■ Free from secondary breakdown
■■ Low power drive requirement
■■ Ease of paralleling
■■ Low C
■■ Excellent thermal stability
■■ Integral Source-Drain diode
■■ High input impedance and high gain
■■ Complementary N- and P-channel devices
and fast switching speeds
ISS
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Applications
■■ Motor controls
■■ Converters
■■ Amplifiers
■■ Switches
■■ Power supply circuits
■■ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
D G S
TO-39
Case: DRAIN
Note: See Package Outline section for dimensions.
7-3
Page 2
Thermal Characteristics
2N6660/2N6661
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
@ TC = 25°C °C/W °C/W
2N6660 1.1A 3A 6.25W 20 125 1.1A 3.0A
2N6661 0.9A 3A 6.25W 20 125 0.9A 3.0A
ID (continuous) is limited by max rated Tj.
*
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
V
GS(th)
∆V
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
GS(th)
Gate Threshold Voltage 0.8 2.0 V VGS = VDS, ID =1mA
Change in V
with Temperature -3.8 -5.5 mV/°CVGS = VDS, ID =1mA
GS(th)
Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
ON-State Drain Current 1.5 A VGS = 10V, VDS = 10V
Static Drain-to-Source
ON-State Resistance
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Notes:
1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Forward Transconductance 170 m V
Input Capacitance 50
Common Source Output Capacitance 40 pF
Reverse Transfer Capacitance 10
Turn-ON Time 10
Turn-OFF Time 10
Diode Forward Voltage Drop 1.2 V VGS = 0V, ISD = 1A
Reverse Recovery Time 350 ns VGS = 0V, ISD = 1A
2N6660 60
2N6661 90
500 V
VV
= 0V, ID = 10µA
GS
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating,
GS
= 125°C
T
A
All 5.0 VGS= 5V, ID = 0.3A
2N6660 3.0 Ω V
2N6661 4.0 V
Ω
= 10V, ID = 1A
GS
= 10V, ID = 1A
GS
= 25V, ID = 0.5A
DS
VGS = 0V, VDS = 24V
f = 1 MHz
ns
VDD = 25V,
I
= 1A, R
D
GEN
= 25Ω
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
7-4
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Loading...