Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6653
DESCRIPTION
·With TO-3 package
·High voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
·Switcing regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
ICM Collector current-peak 30 A
PT Total power dissipation
Tj Junction temperature 200
Collector-base voltage Open emitter 350 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 6 V
T
=25℃
c
150 W
℃
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 1.0
th j-c
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6653
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEV
I
EBO
h
FE-1
h
FE -2
Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V
Collector-emitter breakdown voltage IC=1mA ; IE=0 350 V
Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V
Collector-emitter saturation voltage IC=15A; IB=3A 1.8 V
Base-emitter saturation voltage IC=15A; IB=3A 1.8 V
V
=350V;V
Collector cut-off current
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 15 50
DC current gain IC=15A ; VCE=5V 10
CE
TC=150℃
BE(off)
=-1.5V
0.1
2.0
mA
fT Transition frequency IC=0.5A ; VCE=10V 15 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6653
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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