Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6537
DESCRIPTION
·With TO-66 package
·DARLINGTON
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulators
·Audio amplifiers
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-Peak 15 A
IB Base current 0.25 A
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
PT Total power dissipation TC=25℃ 36 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6537
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.2A ; IB=0 120 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 2.0 V
Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V
Base -emitter on voltage IC=3A ; VCE=3V 2.8 V
Base -emitter on voltage IC=8A ; VCE=3V 4.5 V
V
=120V; VBE=-1.5V
Collector cut-off current
Collector cut-off current VCE=120V; IB=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 5.0 mA
DC current gain IC=3A ; VCE=3V 1000 10000
DC current gain IC=8A ; VCE=3V 100 5000
CE
TC=125℃
0.5
5.0
mA
VF Diode forward voltage IF=5A 4.0 V
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6537
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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