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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6500
DESCRIPTION
·Collector-Emitter Sustaining Voltage: V
CEO(SUS)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in high-current, high-speed switching
circuits such as:low-distortion power amplifiers,oscillators,
switching regulators, series regulators, converters, and
inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 90V(Min)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
CER
V
EBO
IC Collector Current-Continuous 4 A
ICM Collector Current-Peak 5 A
IB Base Current-Continuous 3 A
PD Total Power Dissipation@TC=25℃ 35 W
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 90 V
Collector-Emitter Voltage RBE= 50Ω 110 V
Emitter-Base Voltage 7 V
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 5.0 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6500
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CER(SUS)
V
CE
V
BE
I
CEV
I
CEO
I
EBO
h
FE
I
s/b
(sat)
(sat)
Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 90 V
Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 50Ω 110 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V
Collector Cutoff Current
Collector Cutoff Current VCE= 70V; IB= 0 5 mA
Emitter Cutoff Current VEB= 7V; IC= 0 25 mA
DC Current Gain IC= 3A; VCE= 2V 15 60
Second Breakdown Collector
Current with Base Forward Biased
PARAMETER CONDITIONS MIN MAX UNIT
VCE= 110V; VBE= -1.5V
VCE= 110V; VBE= -1.5V; TC= 150℃
VCE= 40V, t= 1.0s, Nonrepetitive 0.4 A
5
10
mA
fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 6 MHz
COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 175 pF
isc Website：www.iscsemi.cn
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