Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6494
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
PD Total Power Dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.75 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6494
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
VBE Base-emitter on voltage IC=5A ; VCE=4V 2.8 V
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1 A ;IB=0 80 V
Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V
Base-emitter saturation voltage IC=10A ;IB=100mA 4 V
Collector cut-off current VCE=60V; IB=0 1.0 mA
Collector cut-off current VCE=100V; V
Emitter cut-off current VEB=5V; IC=0 3.0 mA
DC current gain IC=5A ; VCE=4V 500
DC current gain IC=15A ; VCE=4V 100
=-1.5V 0.5 mA
BE(off)
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6494
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
Loading...