Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6493
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
PD Total Power Dissipation
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 70 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
Storage temperature -65~200
100 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.75 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6493
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
Collector-emitter sustaining voltage IC=0.1 A ;IB=0 70 V
Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V
Base-emitter saturation voltage IC=10A ;IB=100mA 4 V
VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V
I
Collector cut-off current VCE=50V; IB=0 1.0 mA
CEO
I
Collector cut-off current VCE=100V; V
CEX
I
Emitter cut-off current VEB=5V; IC=0 3.0 mA
EBO
h
DC current gain IC=4A ; VCE=4V 500
FE-1
h
DC current gain IC=15A ; VCE=4V 100
FE-2
=-1.5V 0.5 mA
BE(off)
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6493
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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