Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6477 2N6478
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High voltage ratings
·Excellent safe operating area
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N6477 140
V
CBO
V
CEO
V
EBO
IC Collector current 2.5 A
ICM Collector current-peak 4 A
IB Base current 1 A
PT Total power dissipation
Collector-base voltage
2N6478
2N6477 120
Collector-emitter voltage
2N6478
Emitter-base voltage Open collector 5 V
Open emitter
Open base
T
=25℃
C
V
160
V
140
50 W
Tj Junction temperature 150
T
Storage temperature -65~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 2.5
th j-c
℃
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6477 2N6478
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEX
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=1.0A;IB=0.1A 1.0 V
Collector-emitter saturation voltage IC=2.5A;IB=0.5A 2.0 V
Base-emitter on voltage IC=1.0A ; VCE=4V 1.8 V
Base-emitter on voltage IC=2.5A ; VCE=4V 3.0 V
Collector cut-off current
V
=-1.5V
BE
Collector cut-off current
2N6477 120
I
=0.1A ;IB=0
C
2N6478
=130V
V
2N6477
2N6478
2N6477 VCE=80V;IB=0
2N6478 VCE=100V;IB=0
CE
=120V; TC=150℃
V
CE
VCE=150V
VCE=140V; TC=150℃
140
2.0 mA
V
2.0
10
mA
2.0
10
I
Emitter cut-off current VEB=5V; IC=0 2.0 mA
EBO
h
DC current gain IC=1.0A ; VCE=4V 25 150
FE-1
h
DC current gain IC=2.5A ; VCE=4V 5
FE-2
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=0.5A ; VCE=4V 0.2 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6477 2N6478
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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