
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6475 2N6476
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N6475 -110
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
IB Base current -2 A
PT Total power dissipation TC=25℃ 40 W
Collector-base voltage
2N6476
2N6475 -100
Collector-emitter voltage
2N6476
Emitter-base voltage Open collector -5 V
Open emitter
Open base
V
-130
V
-120
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 3.125
th j-c
℃/W

Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6475 2N6476
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEX
Collector-emitter
sustaining voltage
2N6476
=-0.1A ;IB=0
I
C
V
-120
Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A -1.2 V
Collector-emitter saturation voltage IC=-4A;IB=-2A -2.5 V
Base-emitter on voltage IC=-1.5A ; VCE=-4V -2.0 V
Base-emitter on voltage IC=-4A ; VCE=-2.5V -3.5 V
V
Collector cut-off current
2N6475
2N6476
=-100V;VBE=-1.5V
CE
TC=100℃
V
=-120V;VBE=-1.5V
CE
TC=100℃
-0.1
-2.0
mA
-0.1
-2.0
2N6475 VCE=-50V;IB=0
2N6475 -100
I
Collector cut-off current
CEO
-1.0 mA
2N6476 VCE=-60V;IB=0
I
Emitter cut-off current VEB=-5V; IC=0 -1.0 mA
EBO
h
DC current gain IC=-1.5A ; VCE=-4V 15 150
FE-1
h
DC current gain IC=-4A ; VCE=-2.5V 2
FE-2
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF
2N6475 4
fT Transition frequency
2N6476
IC=-0.5A ; VCE=-4V
MHz
5
2

Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6475 2N6476
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3