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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6473 2N6474
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N6473 110
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
IB Base current 2 A
PT Total power dissipation TC=25℃ 40 W
Collector-base voltage
2N6474
2N6473 100
Collector-emitter voltage
2N6474
Emitter-base voltage Open collector 5 V
Open emitter
Open base
V
130
V
120
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 3.125
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6473 2N6474
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N6473 100
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6474
V
Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.2 V
CEsat-1
V
Collector-emitter saturation voltage IC=4A;IB=2A 2.5 V
CEsat-2
V
Base-emitter on voltage IC=1.5A ; VCE=4V 2.0 V
BE-1
I
=0.1A ;IB=0
C
V
120
V
Base-emitter on voltage IC=4A ; VCE=2.5V 3.5 V
BE-2
V
I
Collector cut-off current
CEX
2N6473
2N6474
=100V;VBE=-1.5V
CE
TC=100℃
VCE=120V;VBE=-1.5V
TC=100℃
0.1
2.0
mA
0.1
2.0
2N6473 VCE=50V;IB=0
I
Collector cut-off current
CEO
2N6474 V
I
Emitter cut-off current VEB=5V; IC=0 1.0 mA
EBO
h
DC current gain IC=1.5A ; VCE=4V 15 150
FE-1
h
DC current gain IC=4A ; VCE=2.5V 2
FE-2
=60V;IB=0
CE
1.0 mA
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=0.5A ; VCE=4V 4 MHz
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Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6473 2N6474
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
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