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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6470
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-
: h
= 20-150(Min)@IC = 5A
FE
·Low Saturation Voltage: V
CE(sat
APPLICATIONS
·Designed for general-purpose switching and linear amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
)= 1.3V(Max)@ IC = 5A
=25℃)
a
V
CBO
V
CER
V
CEO
V
EBO
IC Collector Current-Continuous 15 A
IB Base Current-Continuous 5 A
PC
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage 50 V
Collector-Emitter Voltage RBE= 100Ω 50 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Power Dissipation @T
Storage Temperature -65~200 ℃
=25℃
C
125 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.4
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6470
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CER(SUS)
V
CE
(sat)
V
CE
(sat)
V
BE(on)
I
CEO
I
CER
I
CEX
I
EBO
h
FE-1
Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 40 V
Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100Ω 50 V
Collector-Emitter Saturation Voltage I
-1
Collector-Emitter Saturation Voltage I
-2
Base-Emitter On Voltage I
= 5A; IB= 0.5A 1.3 V
C
= 15A; IB= 5A 3.5 V
C
= 15A; VCE= 4V 3.5 V
C
Collector Cutoff Current VCE= 20V; IB= 0 1.0 mA
Collector Cutoff Current VCE= 35V; RBE= 100Ω 0.2 mA
Collector Cutoff Current
VCE= 45V; V
V
= 45V; V
CE
= -1.5V
BE(
)
off
= -1.5V,TC=150℃
BE(
)
off
0.2
5.0
mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 5A ; VCE= 4V 20 150
h
DC Current Gain IC= 15A ; VCE= 4V 5
FE-2
isc Website：www.iscsemi.cn
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