Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6469
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose of switching
and linear-amplifier applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -50 V
CBO
V
Collector-emitter voltage Open base -40 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -15 A
IB Base current -5 A
PT Total power dissipation TC=25℃ 125 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.4
th j-c
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6469
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=-15A ; VCE=-4V -3.5 V
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -40 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 V
Collector-emitter saturation voltage IC=-15A; IB=-3A -3.5 V
Collector cut-off current VCE=-20V; IB=0 1.0 mA
=-45V; VBE=-1.5V
V
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -5 mA
DC current gain IC=-5A ; VCE=-4V 20 150
DC current gain IC=-15A ; VCE=-4V 5
CE
TC=150℃
-0.2
-5.0
mA
fT Transition frequency IC=-0.5A ; VCE=-10V 4 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6469
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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