Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6467 2N6468
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Complement to type 2N6465 2N6466
APPLICATIONS
·For use in audio amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N6467 -110
V
Collector-base voltage
CBO
2N6468
2N6467 -100
V
Collector-emitter voltage
CEO
2N6468
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -4 A
PD Total power dissipation TC=25℃ 40 W
Open emitter
Open base
V
-130
V
-120
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 2.5 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6467 2N6468
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N6467 -100
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=-1.5A ; VCE=-4V -1.5 V
I
CBO
Collector-emitter
sustaining voltage
2N6468
Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.2 V
2N6467 VCB=-110V; IE=0
Collector cut-off current
2N6468 V
=-50mA ;IB=0
I
C
=-130V; IE=0
CB
V
-120
-10 μA
2N6467 VCE= -100V,IB=0
I
Collector cut-off current
CEO
2N6468 V
I
Emitter cut-off current VEB=-5V; IC=0 -10
EBO
hFE DC current gain IC=-1.5A ; VCE=-4V 15 150
fT Transition frequency IC=-0.5A ; VCE=-10V 5 MHz
= -120V,IB=0
CE
-100 μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6467 2N6468
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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