Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6359
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·Excellent safe operating area
APPLICATIONS
·Designed for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 16 A
ICM Collector current-peak 30 A
IB Base current 4 A
PD Total Power Dissipation TC=25℃ 150 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6359
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=8A ; VCE=4V 2.2 V
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
fT Transition freuqency IC=1A ; VCE=4V 0.2 MHz
Collector-emitter breakdwon voltage IC=0.2A ;IB=0 80 V
Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V
Collector-emitter saturation voltage IC=16A; IB=3.2A 4.0 V
Collector cut-off current VCE=80V; IB=0 2.0 mA
V
=100V; V
Collector cut-off current
Emitter cut-off current VEB=7V; IC=0 5.0 mA
DC current gain IC=8A ; VCE=4V 15 60
DC current gain IC=16A ; VCE=4V 5
CE
TC=150℃
BE(off)
=1.5V
10.0
2.0
mA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6359
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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