Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6357
DESCRIPTION
·With TO-3 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For general-purpose amplifier and
low-frequency switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
IB Base current 0.5 A
PD Total Power Dissipation TC=25℃ 150 W
Tj Junction temperature 200 ℃
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.09 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6357
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BE sat
V
I
CEO
I
CBO
I
EBO
h
FE-1
BE
Collector-emitter breakdwon voltage IC=0.2A ;IB=0 60 V
Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V
Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V
Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V
Base-emitter on voltage IC=10A ; VCE=4V 2.8 V
=60V;IB=0
V
Collector cut-off current
Collector cut-off current VCB=80V; IE=0 0.5 mA
Emitter cut-off current VEB=5V; IC=0 5.0 mA
DC current gain IC=4A ; VCE=5V 500 5000
CE
1.0 mA
h
DC current gain IC=20A ; VCE=5V 100
FE-2
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6357
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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