Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6354
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Fast switching speed
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·For switching applications in military
and industrial equipment
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 12 A
IB Base current 5 A
PD Total Power Dissipation TC=25℃ 140 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 6.5 V
Tj Junction temperature 200 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.25 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6354
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
I
CEO
I
CEV
I
CBO
Collector-emitter breakdwon voltage IC=0.2A ;IB=0 120 V
Emitter-base breakdwon voltage IE=5m A ;IC=0 6.5 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.5 V
Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V
Base-emitter saturation voltage IC=5A ;IB=0.5A 1.3 V
Base-emitter saturation voltage IC=10A; IB=1A 2.0 V
=100V;VBE=0
V
Collector cut-off current
Collector cut-off current VCE=140V; IB=0
Collector cut-off current VCB=150V; IE=0 5 mA
CE
TC=125℃
10 mA
10
20
mA
I
Emitter cut-off current VEB=5V; IC=0 5 mA
EBO
h
DC current gain IC=5A ; VCE=2V 20 150
FE-1
h
DC current gain IC=10A ; VCE=2V 10 100
FE-2
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6354
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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