Page 1
2N6344A, 2N6348A,
2N6349A
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6344 thru 2N6349
• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
MAXIMUM RATINGS (T
Rating Symbol Value Unit
*Peak Repetitive Off−State Voltage(Note 1)
(Gate Open, T
Sine Wave 50 to 60 Hz, Gate Open)
*On−State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz)
*Peak Non−repetitive Surge Current
(One Full Cycle, 60 Hz, T
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s
*Peak Gate Power (TC = +80°C,
Pulse Width = 2.0 µs)
*Average Gate Power
= +80°C, t = 8.3 ms)
(T
C
*Peak Gate Current
(Pulse Width = 2.0 µs; T
*Peak Gate Voltage
(Pulse Width = 2.0 µs; T
*Operating Junction Temperature Range T
*Storage Temperature Range T
*Indicates JEDEC Registered Data.
1. V
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
= −40 to +110°C,
J
for all types can be applied on a continuous basis. Blocking
RRM
= 25°C unless otherwise noted)
J
2N6344A, 2N6348A
2N6349A
= +80°C)
(T
C
= +95°C)
(T
C
= +80°C)
C
= +80°C)
C
= +80°C)
C
V
DRM,
V
RRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GM
stg
Volts
600
800
A
12
6.0
100 A
20 Watts
0.5 Watt
2.0 A
10 Volts
−40 to
J
+125
−40 to
+150
°C
°C
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TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
1
2
3
TO−220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
2N6344A TO220AB 500/Box
2N6348A TO220AB
2N6349A TO220AB
Preferred devices are recommended choices for future use
and best overall value.
MT1
G
4
500/Box
500/Box
Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 2
1 Publication Order Number:
2N6344A/D
Page 2
2N6344A, 2N6348A, 2N6349A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
= Rated V
D
DRM
, V
; Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
*Peak On-State Voltage
(I
= 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
TM
Gate Trigger Current (Continuous dc)
(V
= 12 Vdc, RL = 100 Ohms)
D
Quadrant I: MT2(+), G(+) All
Quadrant II: MT2(+), G(−) 2N6348A and 2N6349A only
Quadrant III: MT2(−), G(−) All
Quadrant IV: MT2(−), G(+) 2N6348A and 2N6349A only
*MT2(+), G(+); MT2(−), G(−) T
*MT2(+), G(−); MT2(−), G(+) T
= −40°C
C
= −40°C
C
Gate Trigger Voltage (Continuous dc)
(V
= 12 Vdc, RL = 100 ohms)
D
Quadrant I: MT2(+), G(+) All
Quadrant II: MT2(+), G(−) 2N6348A and 2N6349A only
Quadrant III: MT2(−), G(−) All
Quadrant IV: MT2(−), G(+) 2N6348A and 2N6349A only
*MT2(+), G(+); MT2(−), G(−) T
*MT2(+), G(−); MT2(−), G(+) T
= −40°C
C
= −40°C
C
Gate Non−Trigger Voltage
(V
= Rated V
D
, RL = 10 k ohms, TJ = 110°C)
DRM
*MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(+)
Holding Current
(V
= 12 Vdc, Gate Open) TC = 25°C
D
Initiating Current = 200 mA *T
*Turn-On Time
(V
= Rated V
D
, ITM = 17 A, IGT = 120 mA,
DRM
Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
= Rated V
D
Gate Unenergized, T
*Indicates JEDEC Registered Data.
, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
DRM
= 80°C)
C
= 25°C unless otherwise noted; Electricals apply in either direction)
C
Symbol Min Typ Max Unit
I
DRM
I
= 110°C
T
J
= −40°C
C
RRM
V
TM
I
GT
V
GT
V
GD
I
t
gt
H
dv/dt(c) — 5.0 — V/µs
θ
JC
L
2.0 °C/W
260 °C
,
—
—
—
—
10
2.0
µA
mA
— 1.3 1.75 Volts
mA
—
—
—
—
—
—
6.0
6.0
10
25
—
—
50
75
50
75
100
125
Volts
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
—
2.0
2.5
2.0
2.5
2.5
3.0
Volts
0.2 — —
mA
—
—
6.0
—
40
75
— 1.5 2.0 µs
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Page 3
Symbol Parameter
V
I
DRM
V
I
RRM
V
I
H
DRM
RRM
TM
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
2N6344A, 2N6348A, 2N6349A
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
at V
I
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 −
V
TM
+ Current
I
H
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
+ Voltage
I
at V
DRM
DRM
(+) MT2
Quadrant II Quadrant I
2N6348A
2N6349A
(−) I
GATE
GT
MT1
REF
I
− + I
GT
(−) MT2
Quadrant III Quadrant IV
All
(−) I
GATE
GT
MT1
REF
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(−) MT2
GT
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
All
GT
2N6348A
2N6349A
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2N6344A, 2N6348A, 2N6349A
110
30°
60°
100
90°
120°
90
180°
α
80
C
T , CASE TEMPERATURE ( C)°
70
0
α
α = CONDUCTION ANGLE
, RMS ON-STATE CURRENT, (AMP)
I
T(RMS)
dc
1412108.06.04.02.0
Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation
1.8 50
1.6
1.4
1.2
QUADRANT 4
VD = 12 V
8.0
AV
4.0
P , AVERAGE POWER (WATTS)
20
16
12
α = CONDUCTION ANGLE
0
0
2.0 4.0 6.0 8.0 10 12 14
30
20
α
α
T
= 110°C
J
α = 30°
, RMS ON-STATE CURRENT (AMP)
I
T(RMS)
dc
180°
120°
90°
60
°
VD = 12 V
1.0
gt
V , GATE TRIGGER VOLTAGE (VOLTS)
0.8
QUADRANTS
0.6
1
2
3
0.4
−40
−60 20−20 0 40 60 80 100 120 140
, JUNCTION TEMPERATURE (°C)
T
J
Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current
10
GT
7.0
I , GATE TRIGGER CURRENT (mA)
5.0
QUADRANT
1
2
3
4
T
, JUNCTION TEMPERATURE (°C)
J
140120100806040200−20−40−60
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2N6344A, 2N6348A, 2N6349A
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
TM
i , INSTANTANEOUS ON-STATE CURRENT (AMP)
0.7
0.5
T
= 100°C
J
25°C
20
GATE OPEN
MAIN TERMINAL #1
10
POSITIVE
7.0
5.0
MAIN TERMINAL #2
H
I , HOLDING CURRENT (mA)
3.0
POSITIVE
2.0
−40
−60 −20 200 40 10080 140
, JUNCTION TEMPERATURE (°C)
T
J
Figure 6. Typical Holding Current
100
80
60
12060
0.3
0.2
0.1
0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
v
TM
1.0
0.5
(NORMALIZED)
0.2
0.1
0.05
0.02
Figure 5. On−State Characteristics
40
, PEAK SURGE CURRENT (AMP)
20
TSM
I
0
1.0
CYCLE
T
= 100°C
J
f = 60 Hz
Surge is preceded and followed by rated current
2.0 3.0 5.0 7.0 10
NUMBER OF CYCLES
Figure 7. Maximum Non−Repetitive
Surge Current
Z
= r(t) • R
θ
JC(t)
θ
JC
0.01
r(t), TRANSIENT THERMAL RESISTANCE
0.1
2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2
t,TIME (ms)
Figure 8. Typical Thermal Response
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2N6344A, 2N6348A, 2N6349A
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
SEATING
−T−
PLANE
FB
Q
4
A
123
T
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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6
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