Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6322
DESCRIPTION
·With TO-3 package
·High current and high power capability
·Low collector saturation voltage
APPLICATIONS
·For use in high current ,high
power applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 30 A
IB Base current 10 A
PD Total Power Dissipation
Tj Junction temperature 200
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
Storage temperature -65~200
200 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.5
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6322
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
Collector-emitter breakdwon voltage IC=30mA ;IB=0 200 V
Collector-base breakdwon voltage IC=2m A ;IE=0 300 V
Emitter-base breakdwon voltage IE=2m A ;IC=0 5 V
Collector-emitter saturation voltage IC=20A ;IB=2A 1.5 V
Collector-emitter saturation voltage IC=30A; IB=6A 3.0 V
VBE Base-emitter on voltage IC=30A ; VCE=5V 2.5 V
I
Collector cut-off current VCE=100V; IB=0 2.0 mA
CEO
I
Collector cut-off current VCE=300V; VBE=0 20 μA
CES
I
Emitter cut-off current VEB=5V; IC=0 20 μA
EBO
h
DC current gain IC=5A ; VCE=5V 40 150
FE-1
h
DC current gain IC=20A ; VCE=5V 12
FE-2
h
DC current gain IC=30A ; VCE=5V 6
FE-3
fT Transition frequency IC=1A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6322
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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