Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6308
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
IB Base current 4 A
PT Total power dissipation
Collector-base voltage Open emitter 700 V
Collector-emitter voltage Open base 350 V
Emitter-base voltage Open collector 8 V
T
=25℃
c
125 W
Tj Junction temperature 200
T
Storage temperature -65~200
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6308
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter sustaining voltage IC=0.1A ; IB=0 350 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.5 V
Collector-emitter saturation voltage IC=8A; IB=2.67A 5.0 V
Base-emitter saturation voltage IC=8A; IB=2.67A 2.5 V
VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V
I
Collector cut-off current VCE=700V; VBE=-1.5V 0.5 mA
CEV
I
Collector cut-off current VCE=350V; IB=0 0.5 mA
CEO
I
Emitter cut-off current VEB=8V; IC=0 1.0 mA
EBO
h
DC current gain IC=3A ; VCE=5V 12 60
FE-1
h
DC current gain IC=8A ; VCE=5V 3
FE -2
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=0.3A ; VCE=10V;f=1MHz 5 MHz
Switching times
tr Rise time 0.6
=125V; IC=3.0A; IB=0.6A
ts Storage time 1.6
tf Fall time
V
CC
0.4
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6308
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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