Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6302
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain @I
APPLICATIONS
·Designed for use in high power audio
amplifier applications and high voltage
switching regulator circuits
PINNING (See Fig.2)
PIN DESCRIPTION
=8A
C
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 16 A
ICM Collector current-peak 20 A
IB Base current 5 A
PT Total power dissipation Tc=25℃ 150 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6302
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter sustaining voltage IC=0.1A ; IB=0 140 V
Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V
Collector-emitter saturation voltage IC=16A; IB=4A 2.0 V
Base-emitter saturation voltage IC=10A; IB=1A 1.8 V
VBE Base-emitter on voltage IC=8A ; VCE=4V 1.5 V
=140V; VBE=-1.5V
V
I
Collector cut-off current
CEV
I
Collector cut-off current VCB=140V; IE=0 1.0 mA
CBO
I
Collector cut-off current VCE=70V; IB=0 2.0 mA
CEO
I
Emitter cut-off current VEB=7V; IC=0 1.0 mA
EBO
h
DC current gain IC=8A ; VCE=4V 15 60
FE-1
CE
TC=150℃
1.0
5.0
mA
h
DC current gain IC=16A ; VCE=4V 4
FE -2
fT Transition frequency IC=1A ; VCE=10V;f=1MHz 0.2 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6302
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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