Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6300 2N6301
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6298/6299
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 0.12 A
PT Total power dissipation TC=25℃ 75 W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
2N6300 60
2N6301
2N6300 60
2N6301
Open emitter
Open base
V
80
V
80
Tj Junction temperature 200 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 2.33
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6300 2N6301
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter
sustaining voltage
2N6301
IC=0.1A ; IB=0
V
80
Collector-emitter saturation voltage IC=4A; IB=16mA 2.0 V
Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V
Base-emitter saturation voltage IC=8A; IB=80mA 4.0 V
VBE Base -emitter on voltage IC=4A ; VCE=3V 2.8 V
2N6300 60
V
I
Collector cut-off current
CEX
2N6300
2N6301
=60V; V
CE
=150℃
T
C
V
=80V; V
CE
TC=150℃
BE(off)
BE(off)
=1.5V
=1.5V
0.5
5.0
mA
0.5
5.0
2N6300 VCE=30V; IB=0
I
Collector cut-off current
CEO
2N6301 V
=40V; IB=0
CE
0.5 mA
I
Emitter cut-off current VEB=5V; IC=0 2.0 mA
EBO
h
DC current gain IC=4A ; VCE=3V 750 18000
FE-1
h
DC current gain IC=8A ; VCE=3V 100
FE-2
COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 200 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6300 2N6301
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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