Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6262
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Designed for audio amplifier and
switching circuits applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PD Total Power Dissipation
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 170 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
Storage temperature -65~200
150 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6262
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V
I
CEO
I
CEV
I
CBO
I
EBO
hFE DC current gai n IC=3A ; VCE=2V 20 70
fT Transition frequency IC=1A;VCE=10V 0.8 MHz
Collector-emitter sustaining voltage IC=0.2A ;IB=0 150 V
Collector-emitter saturation voltge IC=5A ;IB=0.5A 2.0 V
Base-emitter saturation voltage IC=10A ;IB=2A 3.5 V
Collector cut-off current VCE=100V; IB=0 1.0 mA
V
=150V; V
Collector cut-off current
Emitter cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
CE
TC=150℃
BE(off)
=1.5V
0.1
5.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6262
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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