Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6260
DESCRIPTION
·With TO-66 package
·Low saturation voltage
·Wide safe operating area
APPLICATIONS
·Power switching circuits
·High-fidelity amplifers
·Solenoid drivers
·Series and shunt-regulator driver
and output stages
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
IB Base current 2 A
PT Total power dissipation TC=25℃ 29 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 50 V
Collector-emitter voltage Open base 40 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 3.5
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6260
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
VBE Base -emitter on voltage IC=1.5A ; VCE=2V 1.5 V
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1 A ; IB=0 80 V
Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.5 V
V
=40V;V
Collector cut-off current
Collector cut-off current VCE=30V; IB=0 0.5 mA
Emitter cut-off current VEB=7V; IC=0 0.2 mA
DC current gain IC=4A ; VCE=2V 5
DC current gain IC=1.5A ; VCE=2V 20 100
CE
=150℃
T
C
BE(off)
=-1.5V
0.5
1.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6260
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...