Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6258
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·Designed for audio amplifier and
switching circuits applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 30 A
IB Base current 7.5 A
PD Total Power Dissipation TC=25℃ 250 W
Tj Junction temperature 150 ℃
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6258
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CEO
I
CEV
I
CBO
I
EBO
hFE DC current gai n IC=15A ; VCE=2V 20
fT Transition frequency IC=1A;VCE=10V 0.8 MHz
Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V
Collector-emitter saturation voltge IC=7.5A ;IB=0.75A 1.0 V
Base-emitter saturation voltage IC=7.5A ;IB=0.75A 1.3 V
Collector cut-off current VCE=40V; IB=0 1.0 mA
=100V; V
V
Collector cut-off current
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
CE
TC=150℃
BE(off)
=1.5V
0.1
5.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N6258
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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