Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6251
DESCRIPTION
·Collector-Emitter Sustaining Voltage: V
CEO(SUS)
·High Power Dissipation
APPLICATIONS
·Designed for high voltage, high current ,high speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 100V(Min)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
CEV
V
CER
V
EBO
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak 30 A
IB Base Current-Continuous 10 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage 450 V
Collector-Emitter Voltage 350 V
Collector-Emitter Voltage 375 V
Collector-Emitter Voltage 375 V
Emitter-Base Voltage 6 V
175 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case
PARAMETER MAX UNIT
1.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2N6251
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CER
V
CE
(sat)
V
BE
(sat)
I
CEV
I
CEO
I
EBO
hFE DC Current Gain IC= 10A ; VCE= 3V 6 50
I
s/b
fT Current Gain-Bandwidth Product
Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 350 V
Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 50Ω 375 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 1.67A 1.5 V
Base-Emitter Saturation Voltage IC= 10A; IB= 1.67A 2.25
Collector Cutoff Current
Collector Cutoff Current VCE= 300V; IB= 0 5.0 mA
Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA
Second Breakdown Collector
Current with Base Forward Biased
PARAMETER CONDITIONS MIN MAX UNIT
VCE= Rated V
VCE= Rated V
VCE= 30V,t= 1.0s,Nonrepetitive 5.8 A
IC= 1A ; VCE= 10V; f
; VBE= -1.5V
CEV
; VBE= -1.5V;TC=125℃
CEV
= 1.0MHz
test
5.0
10
2.5 MHz
V
mA
Switching Times
tr
t
stg
tf
Rise Time 2.0 μs
Storage Time 3.5 μs
Fall Time
IC= 10A , VCC= 200V, IB1= -IB2= 1.67A
1.0 μs
isc Website：www.iscsemi.cn
2
Loading...