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TECHNICAL DATA
SILICON NPN TRANSISTOR
Devices
2N6232
• FAST SWITCHING
• LOW SATURATION VOLTAGE
10 AMP
100 V
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak
Base Current – Continuous I
Total Power Dissipation @ TC = 250C
Operating & Storage Junction Temperature Range
(1)
V
V
V
T
J,
CEO
CBO
EBO
I
P
T
C
B
D
stg
100 Vdc
140 Vdc
7.0 Vdc
10 Adc
Adc
1.25 W
-65 to +200
W/0C
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
6.67
0
C/W
TO-5
(1) Pulse Test: Pulse Width = Duty Cycle < %
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
= 100 mAdc, IB = 0
I
C
Collector-Emitter Cutoff Current
= 140 Vdc, Rbe = 0
V
CE
Collector Cutoff Current
= 100 Vdc, RBE = 0 Ω, TC = 1500C
V
CE
Emitter-Base Cutoff Current
= 7.0 Vdc, IC = 0
V
EB
(2)
V
CEO(sus)
I
I
I
CES
CES
EBO
100
Vdc
0.2
0.1
10
uAdc
mAdc
uAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604
Page 1 of 2
Page 2
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
DC Current Gain
= 5.0 Adc, V
I
C
= 2.0 Vdc
CE
Collector-Emitter Saturation Voltage
= 5 Adc, IB = .5 Adc
I
C
Base-Emitter Saturation Voltage
= 10 Adc, IB = 1.0 Adc
I
C
DYNAMIC CHARACTERISTICS
Output Capacitance
V
= 10 Vdc, IE = 0, f = 1.0 MHz
CB
SWITCHING CHARACTERISTICS
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
IC = 5.0 Adc, IB1= Ib2 = 0.5 A
Duty Cycle – 2.0%
2N6232
hFE
V
CE(sat)
V
BE(ON)
C
obo
t
on 250 ns
t
off 1200 ns
25
100
0.7
1.8
150
Vdc
Vdc
PF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604
Page 2 of 2
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